III-V nanowires with quantum dots: MBE growth and properties

R. R. Reznik; K. P. Kotlyar; V. O. Gridchin; I. V. Ilkiv; A. I. Khrebtov; Yu B. Samsonenko; I. P. Soshnikov; N. V. Kryzhanovskaya; L. Leandro; N Akopian; G. E. Cirlin

doi:10.1088/1742-6596/2015/1/012124

III-V nanowires with quantum dots: MBE growth and properties

R. R. Reznik
, K. P. Kotlyar
, V. O. Gridchin
, I. V. Ilkiv
, A. I. Khrebtov
, Yu B. Samsonenko
, I. P. Soshnikov
, N. V. Kryzhanovskaya
, L. Leandro
, N Akopian
, G. E. Cirlin

Alferov University
St. Petersburg State University

Research output: Contribution to journal › Journal article › Research › peer-review

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Abstract

We demonstrate growth of AlGaAs NWs with GaAs QDs and InP NWs with InAsP QDs on silicon substrates. Results of GaAs QDs optical properties study have shown that these objects are sources of single photons. In case of InP NWs with InAsP QDs, the results showed that ~ 100% of homogeneously oriented NWs were formed with good optical quality of this system on a Si(111). PL spectrum peak near 1.3 μm indicates that such system is promising for optoelectronic devices.

Original language	English
Article number	012124
Book series	Journal of Physics: Conference Series
Volume	2015
Issue number	1
Number of pages	6
ISSN	1742-6596
DOIs	https://doi.org/10.1088/1742-6596/2015/1/012124
Publication status	Published - 2021
Event	6^th International Conference on Metamaterials and Nanophotonics - Tbilisi, Georgia Duration: 13 Sept 2021 → 17 Sept 2021

Conference

Conference	6^th International Conference on Metamaterials and Nanophotonics
Country/Territory	Georgia
City	Tbilisi
Period	13/09/2021 → 17/09/2021

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10.1088/1742-6596/2015/1/012124

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@article{40b99544ecbf41fab6f9c8da135cb126,

title = "III-V nanowires with quantum dots: MBE growth and properties",

abstract = "We demonstrate growth of AlGaAs NWs with GaAs QDs and InP NWs with InAsP QDs on silicon substrates. Results of GaAs QDs optical properties study have shown that these objects are sources of single photons. In case of InP NWs with InAsP QDs, the results showed that \textasciitilde{} 100\% of homogeneously oriented NWs were formed with good optical quality of this system on a Si(111). PL spectrum peak near 1.3 μm indicates that such system is promising for optoelectronic devices.",

author = "Reznik, \{R. R.\} and Kotlyar, \{K. P.\} and Gridchin, \{V. O.\} and Ilkiv, \{I. V.\} and Khrebtov, \{A. I.\} and Samsonenko, \{Yu B.\} and Soshnikov, \{I. P.\} and Kryzhanovskaya, \{N. V.\} and L. Leandro and N Akopian and Cirlin, \{G. E.\}",

year = "2021",

doi = "10.1088/1742-6596/2015/1/012124",

language = "English",

volume = "2015",

journal = "Journal of Physics: Conference Series",

issn = "1742-6596",

publisher = "IOP Publishing",

number = "1",

note = "6<sup>th</sup> International Conference on Metamaterials and Nanophotonics , METANANO 2021 ; Conference date: 13-09-2021 Through 17-09-2021",

}

TY - JOUR

T1 - III-V nanowires with quantum dots: MBE growth and properties

AU - Reznik, R. R.

AU - Kotlyar, K. P.

AU - Gridchin, V. O.

AU - Ilkiv, I. V.

AU - Khrebtov, A. I.

AU - Samsonenko, Yu B.

AU - Soshnikov, I. P.

AU - Kryzhanovskaya, N. V.

AU - Leandro, L.

AU - Akopian, N

AU - Cirlin, G. E.

PY - 2021

Y1 - 2021

N2 - We demonstrate growth of AlGaAs NWs with GaAs QDs and InP NWs with InAsP QDs on silicon substrates. Results of GaAs QDs optical properties study have shown that these objects are sources of single photons. In case of InP NWs with InAsP QDs, the results showed that ~ 100% of homogeneously oriented NWs were formed with good optical quality of this system on a Si(111). PL spectrum peak near 1.3 μm indicates that such system is promising for optoelectronic devices.

AB - We demonstrate growth of AlGaAs NWs with GaAs QDs and InP NWs with InAsP QDs on silicon substrates. Results of GaAs QDs optical properties study have shown that these objects are sources of single photons. In case of InP NWs with InAsP QDs, the results showed that ~ 100% of homogeneously oriented NWs were formed with good optical quality of this system on a Si(111). PL spectrum peak near 1.3 μm indicates that such system is promising for optoelectronic devices.

U2 - 10.1088/1742-6596/2015/1/012124

DO - 10.1088/1742-6596/2015/1/012124

M3 - Journal article

SN - 1742-6596

VL - 2015

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

IS - 1

M1 - 012124

T2 - 6<sup>th</sup> International Conference on Metamaterials and Nanophotonics

Y2 - 13 September 2021 through 17 September 2021

ER -

III-V nanowires with quantum dots: MBE growth and properties

Abstract

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