III-V nanostructures with different dimensionality on silicon

R.R. Reznik; K.P. Kotlyar; V.O. Gridchin; I.V. Ilkiv; A.I. Khrebtov; Yu B. Samsonenko; I.P. Soshnikov; N.V. Kryzhanovskaya; L Leandro; N Akopian; G.E. Cirlin

doi:10.1088/1742-6596/2103/1/012121

III-V nanostructures with different dimensionality on silicon

R.R. Reznik, K.P. Kotlyar, V.O. Gridchin, I.V. Ilkiv, A.I. Khrebtov, Yu B. Samsonenko, I.P. Soshnikov, N.V. Kryzhanovskaya, L Leandro, N Akopian, G.E. Cirlin

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Abstract

The possibility of AlGaAs nanowires with GaAs quantum dots and InP nanowires with InAsP quantum dots growth by molecular-beam epitaxy on silicon substrates has been demonstrated. Results of GaAs quantum dots optical properties studies have shown that these objects are sources of single photons. In case of InP nanowires with InAsP quantum dots, the results we obtained indicate that nearly 100% of coherent nanowires can be formed with high optical quality of this system on a silicon surface. The presence of a band with maximum emission intensity near 1.3 μm makes it possible to consider the given system promising for further integration of optical elements on silicon platform with fiber-optic systems. Our work, therefore, opens new prospects for integration of direct bandgap semiconductors and singlephoton sources on silicon platform for various applications in the fields of silicon photonics and quantum information technology.

Original language	English
Article number	012121
Book series	Journal of Physics: Conference Series
Volume	2103
Issue number	1
Number of pages	6
ISSN	1742-6596
DOIs	https://doi.org/10.1088/1742-6596/2103/1/012121
Publication status	Published - 2021

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title = "III-V nanostructures with different dimensionality on silicon",

abstract = "The possibility of AlGaAs nanowires with GaAs quantum dots and InP nanowires with InAsP quantum dots growth by molecular-beam epitaxy on silicon substrates has been demonstrated. Results of GaAs quantum dots optical properties studies have shown that these objects are sources of single photons. In case of InP nanowires with InAsP quantum dots, the results we obtained indicate that nearly 100% of coherent nanowires can be formed with high optical quality of this system on a silicon surface. The presence of a band with maximum emission intensity near 1.3 μm makes it possible to consider the given system promising for further integration of optical elements on silicon platform with fiber-optic systems. Our work, therefore, opens new prospects for integration of direct bandgap semiconductors and singlephoton sources on silicon platform for various applications in the fields of silicon photonics and quantum information technology.",

author = "R.R. Reznik and K.P. Kotlyar and V.O. Gridchin and I.V. Ilkiv and A.I. Khrebtov and Samsonenko, {Yu B.} and I.P. Soshnikov and N.V. Kryzhanovskaya and L Leandro and N Akopian and G.E. Cirlin",

year = "2021",

doi = "10.1088/1742-6596/2103/1/012121",

language = "English",

volume = "2103",

journal = "Journal of Physics: Conference Series",

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T1 - III-V nanostructures with different dimensionality on silicon

AU - Reznik, R.R.

AU - Kotlyar, K.P.

AU - Gridchin, V.O.

AU - Ilkiv, I.V.

AU - Khrebtov, A.I.

AU - Samsonenko, Yu B.

AU - Soshnikov, I.P.

AU - Kryzhanovskaya, N.V.

AU - Leandro, L

AU - Akopian, N

AU - Cirlin, G.E.

PY - 2021

Y1 - 2021

N2 - The possibility of AlGaAs nanowires with GaAs quantum dots and InP nanowires with InAsP quantum dots growth by molecular-beam epitaxy on silicon substrates has been demonstrated. Results of GaAs quantum dots optical properties studies have shown that these objects are sources of single photons. In case of InP nanowires with InAsP quantum dots, the results we obtained indicate that nearly 100% of coherent nanowires can be formed with high optical quality of this system on a silicon surface. The presence of a band with maximum emission intensity near 1.3 μm makes it possible to consider the given system promising for further integration of optical elements on silicon platform with fiber-optic systems. Our work, therefore, opens new prospects for integration of direct bandgap semiconductors and singlephoton sources on silicon platform for various applications in the fields of silicon photonics and quantum information technology.

AB - The possibility of AlGaAs nanowires with GaAs quantum dots and InP nanowires with InAsP quantum dots growth by molecular-beam epitaxy on silicon substrates has been demonstrated. Results of GaAs quantum dots optical properties studies have shown that these objects are sources of single photons. In case of InP nanowires with InAsP quantum dots, the results we obtained indicate that nearly 100% of coherent nanowires can be formed with high optical quality of this system on a silicon surface. The presence of a band with maximum emission intensity near 1.3 μm makes it possible to consider the given system promising for further integration of optical elements on silicon platform with fiber-optic systems. Our work, therefore, opens new prospects for integration of direct bandgap semiconductors and singlephoton sources on silicon platform for various applications in the fields of silicon photonics and quantum information technology.

U2 - 10.1088/1742-6596/2103/1/012121

DO - 10.1088/1742-6596/2103/1/012121

M3 - Conference article

SN - 1742-6596

VL - 2103

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

IS - 1

M1 - 012121

ER -

III-V nanostructures with different dimensionality on silicon

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