III-V nanostructures with different dimensionality on silicon

R.R. Reznik, K.P. Kotlyar, V.O. Gridchin, I.V. Ilkiv, A.I. Khrebtov, Yu B. Samsonenko, I.P. Soshnikov, N.V. Kryzhanovskaya, L Leandro, N Akopian, G.E. Cirlin

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    Abstract

    The possibility of AlGaAs nanowires with GaAs quantum dots and InP nanowires with InAsP quantum dots growth by molecular-beam epitaxy on silicon substrates has been demonstrated. Results of GaAs quantum dots optical properties studies have shown that these objects are sources of single photons. In case of InP nanowires with InAsP quantum dots, the results we obtained indicate that nearly 100% of coherent nanowires can be formed with high optical quality of this system on a silicon surface. The presence of a band with maximum emission intensity near 1.3 μm makes it possible to consider the given system promising for further integration of optical elements on silicon platform with fiber-optic systems. Our work, therefore, opens new prospects for integration of direct bandgap semiconductors and singlephoton sources on silicon platform for various applications in the fields of silicon photonics and quantum information technology.
    Original languageEnglish
    Article number012121
    Book seriesJournal of Physics: Conference Series
    Volume2103
    Issue number1
    Number of pages6
    ISSN1742-6596
    DOIs
    Publication statusPublished - 2021

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