Abstract
The water oxidation capability of the promising photoanode bismuth vanadate (BiVO4) is hampered by poor bulk electron transport and by high rates of charge recombination at the semiconductor/electrolyte interface. Here, we demonstrate that a dual modification of BiVO4 by: (i) annealing in a hydrogen-containing environment and (ii) coating with FeOOH overlayer substantially enhances the water oxidation ability of BiVO4 photoanodes. Hydrogen treated, FeOOH coated BiVO4 photoanodes exhibit a water oxidation photocurrent density of 2.16 mA cm−2 at 1.23 VRHE, which is 5 times higher than for untreated BiVO4 films. Moreover, they showed an impressive low photocurrent onset potential of −0.11 VRHE. A stable photocurrent was observed for 1 h of water oxidation measurement at 1.23 VRHE under 1 Sun illumination. The enhanced photocurrent of FeOOH/H:BiVO4 photoanode is ascribed to an improved bulk charge transport, as confirmed by impedance spectroscopy measurements and Mott-Schottky analysis. The cathodic shift of the onset potential originates from a lowering of the flat band potential and from an improvement of the charge transport at the semiconductor/electrolyte interface. The dual modification strategy used here offers a simple but effective approach of improving the water oxidation performance of BiVO4.
Original language | English |
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Journal | Catalysis Today |
Volume | 321-322 |
Pages (from-to) | 87-93 |
ISSN | 0920-5861 |
DOIs | |
Publication status | Published - 2019 |
Keywords
- Bismuth vanadate
- FeOOH
- Hydrogen treatment
- Photoelectrochemical
- Solar hydrogen