Hybrid Vertical-Cavity Laser

Il-Sug Chung (Inventor)

Research output: Patent

Abstract

The present invention provides a light source (2) for light circuits on a silicon platform (3). A vertical laser cavity is formed by a gain region (101) arranged between a top mirror (4) and a bottom grating-mirror (12) in a grating region (11) in a silicon layer (10) on a substrate. A waveguide (18, 19) for receiving light from the grating region (11) is formed within or to be connected to the grating region, and functions as an 5 output coupler for the VCL. Thereby, vertical lasing modes (16) are coupled to lateral in-plane modes (17, 20) of the in-plane waveguide formed in the silicon layer, and light can be provided to e.g. photonic circuits on a SOI or CMOS substrate in the silicon.
Original languageEnglish
Patent numberWO10091688
Filing date19/08/2010
CountryInternational Bureau of the World Intellectual Property Organization (WIPO)
Publication statusPublished - 2010

Cite this

Chung, I-S. (2010). Hybrid Vertical-Cavity Laser. (Patent No. WO10091688).