Hybrid GaAs/AlGaAs Nanowire—Quantum dot System for Single Photon Sources

G. Cirlin*, R. Reznik, I. Shtrom, A. Khrebtov, Yu Samsonenko, S. Kukushkin, Takeshi Kasama, Nika Akopian, L. Leonardo

*Corresponding author for this work

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Abstract

III–V nanowires, or a combination of the nanowires with quantum dots, are promising building blocks for future optoelectronic devices, in particular, single-photon emitters, lasers and photodetectors. In this work we present results of molecular beam epitaxial growth of combined nanostructures containing GaAs quantum dots inside AlGaAs nanowires on a silicon substrate showing a new way to combine quantum devices with Si technology.
Original languageEnglish
JournalSemiconductors
Volume52
Issue number4
Pages (from-to)462-464
ISSN1063-7826
DOIs
Publication statusPublished - 2018
EventNanostructures: Physics and Technology - Saint Petersburg Academic University, Saint Petersburg, Russian Federation
Duration: 26 Jun 201730 Jun 2017
Conference number: XXV International Symposium

Conference

ConferenceNanostructures: Physics and Technology
NumberXXV International Symposium
LocationSaint Petersburg Academic University
CountryRussian Federation
CitySaint Petersburg
Period26/06/201730/06/2017

Cite this

Cirlin, G., Reznik, R., Shtrom, I., Khrebtov, A., Samsonenko, Y., Kukushkin, S., Kasama, T., Akopian, N., & Leonardo, L. (2018). Hybrid GaAs/AlGaAs Nanowire—Quantum dot System for Single Photon Sources. Semiconductors, 52(4), 462-464. https://doi.org/10.1134/S1063782618040103