Abstract
III–V nanowires, or a combination of the nanowires with quantum dots, are promising building blocks for future optoelectronic devices, in particular, single-photon emitters, lasers and photodetectors. In this work we present results of molecular beam epitaxial growth of combined nanostructures containing GaAs quantum dots inside AlGaAs nanowires on a silicon substrate showing a new way to combine quantum devices with Si technology.
Original language | English |
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Journal | Semiconductors |
Volume | 52 |
Issue number | 4 |
Pages (from-to) | 462-464 |
ISSN | 1063-7826 |
DOIs | |
Publication status | Published - 2018 |
Event | Nanostructures: Physics and Technology - Saint Petersburg Academic University, Saint Petersburg, Russian Federation Duration: 26 Jun 2017 → 30 Jun 2017 Conference number: XXV International Symposium |
Conference
Conference | Nanostructures: Physics and Technology |
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Number | XXV International Symposium |
Location | Saint Petersburg Academic University |
Country/Territory | Russian Federation |
City | Saint Petersburg |
Period | 26/06/2017 → 30/06/2017 |