Hybrid GaAs/AlGaAs Nanowire—Quantum dot System for Single Photon Sources

G. Cirlin*, R. Reznik, I. Shtrom, A. Khrebtov, Yu Samsonenko, S. Kukushkin, Takeshi Kasama, Nika Akopian, L. Leonardo

*Corresponding author for this work

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III–V nanowires, or a combination of the nanowires with quantum dots, are promising building blocks for future optoelectronic devices, in particular, single-photon emitters, lasers and photodetectors. In this work we present results of molecular beam epitaxial growth of combined nanostructures containing GaAs quantum dots inside AlGaAs nanowires on a silicon substrate showing a new way to combine quantum devices with Si technology.
Original languageEnglish
Issue number4
Pages (from-to)462-464
Publication statusPublished - 2018
EventNanostructures: Physics and Technology - Saint Petersburg Academic University, Saint Petersburg, Russian Federation
Duration: 26 Jun 201730 Jun 2017
Conference number: XXV International Symposium


ConferenceNanostructures: Physics and Technology
NumberXXV International Symposium
LocationSaint Petersburg Academic University
CountryRussian Federation
CitySaint Petersburg

Cite this

Cirlin, G., Reznik, R., Shtrom, I., Khrebtov, A., Samsonenko, Y., Kukushkin, S., Kasama, T., Akopian, N., & Leonardo, L. (2018). Hybrid GaAs/AlGaAs Nanowire—Quantum dot System for Single Photon Sources. Semiconductors, 52(4), 462-464. https://doi.org/10.1134/S1063782618040103