Hybrid GaAs/AlGaAs Nanowire—Quantum dot System for Single Photon Sources

G. Cirlin*, R. Reznik, I. Shtrom, A. Khrebtov, Yu Samsonenko, S. Kukushkin, Takeshi Kasama, Nika Akopian, L. Leonardo

*Corresponding author for this work

    Research output: Contribution to journalJournal articleResearchpeer-review

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    Abstract

    III–V nanowires, or a combination of the nanowires with quantum dots, are promising building blocks for future optoelectronic devices, in particular, single-photon emitters, lasers and photodetectors. In this work we present results of molecular beam epitaxial growth of combined nanostructures containing GaAs quantum dots inside AlGaAs nanowires on a silicon substrate showing a new way to combine quantum devices with Si technology.
    Original languageEnglish
    JournalSemiconductors
    Volume52
    Issue number4
    Pages (from-to)462-464
    ISSN1063-7826
    DOIs
    Publication statusPublished - 2018
    EventNanostructures: Physics and Technology - Saint Petersburg Academic University, Saint Petersburg, Russian Federation
    Duration: 26 Jun 201730 Jun 2017
    Conference number: XXV International Symposium

    Conference

    ConferenceNanostructures: Physics and Technology
    NumberXXV International Symposium
    LocationSaint Petersburg Academic University
    Country/TerritoryRussian Federation
    CitySaint Petersburg
    Period26/06/201730/06/2017

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