Abstract
III–V nanowires, or a combination of the nanowires with quantum dots, are promising building blocks for future optoelectronic devices, in particular, single-photon emitters, lasers and photodetectors. In this work we present results of molecular beam epitaxial growth of combined nanostructures containing GaAs quantum dots inside AlGaAs nanowires on a silicon substrate showing a new way to combine quantum devices with Si technology.
| Original language | English |
|---|---|
| Journal | Semiconductors |
| Volume | 52 |
| Issue number | 4 |
| Pages (from-to) | 462-464 |
| ISSN | 1063-7826 |
| DOIs | |
| Publication status | Published - 2018 |
| Event | Nanostructures: Physics and Technology - Saint Petersburg Academic University, Saint Petersburg, Russian Federation Duration: 26 Jun 2017 → 30 Jun 2017 Conference number: XXV International Symposium |
Conference
| Conference | Nanostructures: Physics and Technology |
|---|---|
| Number | XXV International Symposium |
| Location | Saint Petersburg Academic University |
| Country | Russian Federation |
| City | Saint Petersburg |
| Period | 26/06/2017 → 30/06/2017 |
Cite this
Cirlin, G., Reznik, R., Shtrom, I., Khrebtov, A., Samsonenko, Y., Kukushkin, S., Kasama, T., Akopian, N., & Leonardo, L. (2018). Hybrid GaAs/AlGaAs Nanowire—Quantum dot System for Single Photon Sources. Semiconductors, 52(4), 462-464. https://doi.org/10.1134/S1063782618040103