Hybrid GaAs/AlGaAs Nanowire—Quantum dot System for Single Photon Sources

G. Cirlin; R. Reznik; I. Shtrom; A. Khrebtov; Yu Samsonenko; S. Kukushkin; Takeshi Kasama; Nika Akopian; L. Leonardo

doi:10.1134/S1063782618040103

Hybrid GaAs/AlGaAs Nanowire—Quantum dot System for Single Photon Sources

G. Cirlin^*, R. Reznik, I. Shtrom, A. Khrebtov, Yu Samsonenko, S. Kukushkin, Takeshi Kasama, Nika Akopian, L. Leonardo

^*Corresponding author for this work

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Abstract

III–V nanowires, or a combination of the nanowires with quantum dots, are promising building blocks for future optoelectronic devices, in particular, single-photon emitters, lasers and photodetectors. In this work we present results of molecular beam epitaxial growth of combined nanostructures containing GaAs quantum dots inside AlGaAs nanowires on a silicon substrate showing a new way to combine quantum devices with Si technology.

Original language	English
Journal	Semiconductors
Volume	52
Issue number	4
Pages (from-to)	462-464
ISSN	1063-7826
DOIs	https://doi.org/10.1134/S1063782618040103
Publication status	Published - 2018
Event	Nanostructures: Physics and Technology - Saint Petersburg Academic University, Saint Petersburg, Russian Federation Duration: 26 Jun 2017 → 30 Jun 2017 Conference number: XXV International Symposium

Conference

Conference	Nanostructures: Physics and Technology
Number	XXV International Symposium
Location	Saint Petersburg Academic University
Country/Territory	Russian Federation
City	Saint Petersburg
Period	26/06/2017 → 30/06/2017

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@article{851774d8d0ff41249634b53302e9b742,

title = "Hybrid GaAs/AlGaAs Nanowire—Quantum dot System for Single Photon Sources",

abstract = "III–V nanowires, or a combination of the nanowires with quantum dots, are promising building blocks for future optoelectronic devices, in particular, single-photon emitters, lasers and photodetectors. In this work we present results of molecular beam epitaxial growth of combined nanostructures containing GaAs quantum dots inside AlGaAs nanowires on a silicon substrate showing a new way to combine quantum devices with Si technology.",

author = "G. Cirlin and R. Reznik and I. Shtrom and A. Khrebtov and Yu Samsonenko and S. Kukushkin and Takeshi Kasama and Nika Akopian and L. Leonardo",

year = "2018",

doi = "10.1134/S1063782618040103",

language = "English",

volume = "52",

pages = "462--464",

journal = "Semiconductors",

issn = "1063-7826",

publisher = "Verlag C.H. Beck",

number = "4",

note = "Nanostructures: Physics and Technology, NANO2017 ; Conference date: 26-06-2017 Through 30-06-2017",

}

TY - JOUR

T1 - Hybrid GaAs/AlGaAs Nanowire—Quantum dot System for Single Photon Sources

AU - Cirlin, G.

AU - Reznik, R.

AU - Shtrom, I.

AU - Khrebtov, A.

AU - Samsonenko, Yu

AU - Kukushkin, S.

AU - Kasama, Takeshi

AU - Akopian, Nika

AU - Leonardo, L.

N1 - Conference code: XXV International Symposium

PY - 2018

Y1 - 2018

N2 - III–V nanowires, or a combination of the nanowires with quantum dots, are promising building blocks for future optoelectronic devices, in particular, single-photon emitters, lasers and photodetectors. In this work we present results of molecular beam epitaxial growth of combined nanostructures containing GaAs quantum dots inside AlGaAs nanowires on a silicon substrate showing a new way to combine quantum devices with Si technology.

AB - III–V nanowires, or a combination of the nanowires with quantum dots, are promising building blocks for future optoelectronic devices, in particular, single-photon emitters, lasers and photodetectors. In this work we present results of molecular beam epitaxial growth of combined nanostructures containing GaAs quantum dots inside AlGaAs nanowires on a silicon substrate showing a new way to combine quantum devices with Si technology.

U2 - 10.1134/S1063782618040103

DO - 10.1134/S1063782618040103

M3 - Journal article

SN - 1063-7826

VL - 52

SP - 462

EP - 464

JO - Semiconductors

JF - Semiconductors

IS - 4

T2 - Nanostructures: Physics and Technology

Y2 - 26 June 2017 through 30 June 2017

ER -

Hybrid GaAs/AlGaAs Nanowire—Quantum dot System for Single Photon Sources

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