Hybrid AlGaAs nanowires on silicon: growth and properties

G. E. Cirlin, R. R. Reznik, Nika Akopian

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In the article, we demonstrate the growth of AlGaAs nanowires on silicon substrates. It is shown that a controlled growth of short GaAs insertions inside AlGaAs nanowires is possible. Optically, such segments shows sharp and intense quantum dot - like emission lines. Our work opens new prospects for integration of direct bandgap semiconductors and singlephoton sources on silicon platform for various applications in the fields of silicon photonics and quantum information technology.
Original languageEnglish
Article number012002
Book seriesJournal of Physics: Conference Series (Online)
Number of pages4
Publication statusPublished - 2020

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