In the article, we demonstrate the growth of AlGaAs nanowires on silicon substrates. It is shown that a controlled growth of short GaAs insertions inside AlGaAs nanowires is possible. Optically, such segments shows sharp and intense quantum dot - like emission lines. Our work opens new prospects for integration of direct bandgap semiconductors and singlephoton sources on silicon platform for various applications in the fields of silicon photonics and quantum information technology.
Cirlin, G. E., Reznik, R. R., & Akopian, N. (2020). Hybrid AlGaAs nanowires on silicon: growth and properties. Journal of Physics: Conference Series (Online), 1537, . https://doi.org/10.1088/1742-6596/1537/1/012002