Abstract
Nanoscale hut clusters formed on Ge(001) surfaces by depositing one monolayer of indium and annealing at temperatures between 350 and 500 degrees C were studied by scanning tunnelling microscopy and synchrotron X-ray diffraction. It was found that the hut clusters form regular arrays over the entire surface. The huts are aligned with the [100] directions of the bulk Ge crystal and bounded by {103} facets. A structural model is proposed in which the clusters consist of Ge atoms and the dangling bonds on the {103} facets are saturated by In atoms which thereby stabilize the structure.
| Original language | English |
|---|---|
| Journal | Surface Science |
| Volume | 352 |
| Issue number | 430-434 |
| Pages (from-to) | 430-434 |
| ISSN | 0039-6028 |
| DOIs | |
| Publication status | Published - 1996 |