Hut clusters on Ge(001) surfaces studied by STM and synchrotron X-ray diffraction

M. Nielsen; D.-M. Smilgies; R. Feidenhans'l; E. Landemark; G. Falkenberg; L. Lottermoser; L. Seehofer; R.L. Johnson

doi:10.1016/0039-6028(95)01175-7

Hut clusters on Ge(001) surfaces studied by STM and synchrotron X-ray diffraction

M. Nielsen, D.-M. Smilgies, R. Feidenhans'l, E. Landemark, G. Falkenberg, L. Lottermoser, L. Seehofer, R.L. Johnson

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Abstract

Nanoscale hut clusters formed on Ge(001) surfaces by depositing one monolayer of indium and annealing at temperatures between 350 and 500 degrees C were studied by scanning tunnelling microscopy and synchrotron X-ray diffraction. It was found that the hut clusters form regular arrays over the entire surface. The huts are aligned with the [100] directions of the bulk Ge crystal and bounded by {103} facets. A structural model is proposed in which the clusters consist of Ge atoms and the dangling bonds on the {103} facets are saturated by In atoms which thereby stabilize the structure.

Original language	English
Journal	Surface Science
Volume	352
Issue number	430-434
Pages (from-to)	430-434
ISSN	0039-6028
DOIs	https://doi.org/10.1016/0039-6028(95)01175-7
Publication status	Published - 1996

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title = "Hut clusters on Ge(001) surfaces studied by STM and synchrotron X-ray diffraction",

abstract = "Nanoscale hut clusters formed on Ge(001) surfaces by depositing one monolayer of indium and annealing at temperatures between 350 and 500 degrees C were studied by scanning tunnelling microscopy and synchrotron X-ray diffraction. It was found that the hut clusters form regular arrays over the entire surface. The huts are aligned with the [100] directions of the bulk Ge crystal and bounded by {103} facets. A structural model is proposed in which the clusters consist of Ge atoms and the dangling bonds on the {103} facets are saturated by In atoms which thereby stabilize the structure. ",

keywords = "Materialer med s{\ae}rlige fysiske og kemiske egenskaber; Nye funktionelle materialer",

author = "M. Nielsen and D.-M. Smilgies and R. Feidenhans'l and E. Landemark and G. Falkenberg and L. Lottermoser and L. Seehofer and R.L. Johnson",

year = "1996",

doi = "10.1016/0039-6028(95)01175-7",

language = "English",

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journal = "Surface Science",

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T1 - Hut clusters on Ge(001) surfaces studied by STM and synchrotron X-ray diffraction

AU - Nielsen, M.

AU - Smilgies, D.-M.

AU - Feidenhans'l, R.

AU - Landemark, E.

AU - Falkenberg, G.

AU - Lottermoser, L.

AU - Seehofer, L.

AU - Johnson, R.L.

PY - 1996

Y1 - 1996

N2 - Nanoscale hut clusters formed on Ge(001) surfaces by depositing one monolayer of indium and annealing at temperatures between 350 and 500 degrees C were studied by scanning tunnelling microscopy and synchrotron X-ray diffraction. It was found that the hut clusters form regular arrays over the entire surface. The huts are aligned with the [100] directions of the bulk Ge crystal and bounded by {103} facets. A structural model is proposed in which the clusters consist of Ge atoms and the dangling bonds on the {103} facets are saturated by In atoms which thereby stabilize the structure.

AB - Nanoscale hut clusters formed on Ge(001) surfaces by depositing one monolayer of indium and annealing at temperatures between 350 and 500 degrees C were studied by scanning tunnelling microscopy and synchrotron X-ray diffraction. It was found that the hut clusters form regular arrays over the entire surface. The huts are aligned with the [100] directions of the bulk Ge crystal and bounded by {103} facets. A structural model is proposed in which the clusters consist of Ge atoms and the dangling bonds on the {103} facets are saturated by In atoms which thereby stabilize the structure.

KW - Materialer med særlige fysiske og kemiske egenskaber; Nye funktionelle materialer

U2 - 10.1016/0039-6028(95)01175-7

DO - 10.1016/0039-6028(95)01175-7

M3 - Journal article

SN - 0039-6028

VL - 352

SP - 430

EP - 434

JO - Surface Science

JF - Surface Science

IS - 430-434

ER -

Hut clusters on Ge(001) surfaces studied by STM and synchrotron X-ray diffraction

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