Hut clusters on Ge(001) surfaces studied by STM and synchrotron X-ray diffraction

M. Nielsen, D.-M. Smilgies, R. Feidenhans'l, E. Landemark, G. Falkenberg, L. Lottermoser, L. Seehofer, R.L. Johnson

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    Nanoscale hut clusters formed on Ge(001) surfaces by depositing one monolayer of indium and annealing at temperatures between 350 and 500 degrees C were studied by scanning tunnelling microscopy and synchrotron X-ray diffraction. It was found that the hut clusters form regular arrays over the entire surface. The huts are aligned with the [100] directions of the bulk Ge crystal and bounded by {103} facets. A structural model is proposed in which the clusters consist of Ge atoms and the dangling bonds on the {103} facets are saturated by In atoms which thereby stabilize the structure.
    Original languageEnglish
    JournalSurface Science
    Issue number430-434
    Pages (from-to)430-434
    Publication statusPublished - 1996

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