We present a concept of a rf amplifier based on a directly coupled dc SQUID with bicrystal junctions, which have high saturation power and can be used with SIS mixers or possibly for satellite and cellular phone communications. A novel input resonant circuit is proposed using single layer of HTS. Estimated parameters are (per stage): central frequency 11 GHz, bandwidth approximate to 400 MHz, noise temperature approximate to 10 K, gain approximate to 10 dB and input saturation approximate to 1000 K GHz.
|Journal||Physica C: Superconductivity and its Applications|
|Publication status||Published - 2002|