HTS dc SQUID based rf amplifier: development concept

G.V. Prokopenko, S.V. Shitov, I.V. Borisenko, Jesper Mygind

Research output: Contribution to journalJournal articleResearchpeer-review

Abstract

We present a concept of a rf amplifier based on a directly coupled dc SQUID with bicrystal junctions, which have high saturation power and can be used with SIS mixers or possibly for satellite and cellular phone communications. A novel input resonant circuit is proposed using single layer of HTS. Estimated parameters are (per stage): central frequency 11 GHz, bandwidth approximate to 400 MHz, noise temperature approximate to 10 K, gain approximate to 10 dB and input saturation approximate to 1000 K GHz.
Original languageEnglish
JournalPhysica C: Superconductivity and its Applications
Volume368
Issue number1-4
Pages (from-to)153-156
ISSN0921-4534
Publication statusPublished - 2002

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