The effect of external feedback on the degradation of 808 nm emitting AlGaAs-based high-power broad-area diode lasers is studied. For this purpose, early stages of gradual degradation are induced by accelerated aging at high power levels. While the quantum well that actually experiences the highest total optical load remains unaffected, severe impact by point defects is observed on the cladding layers and the waveguide. Extended defects such as dislocations, however, are not observed in such early stages of degradation, which are accompanied by gradual power loss of a few percent only.
Bibliographical noteCopyright 2013 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in
Applied Physics Letters / Volume 102 / Issue 2 and may be found at http://apl.aip.org/resource/1/applab/v102/i2/p023502_s1.