Abstract
We have used m-photoluminescence spectroscopy with a spectral resolution of 20 meV to measure homogeneous linewidths of single emission lines within an inhomogeneously broadened ensemble of In0.5Ga0.5As/GaAs self-assembled quantum dots. At 10K, a distribution of linewidths peaking around 50 meV is found, which corresponds to a dephasing time of 26 ps. The shape of the linewidth distribution is similar for dots lying at the high and low-energy tail of the dot ensemble.
| Original language | English |
|---|---|
| Title of host publication | Proceedings, Nonlinear Optics and Excitation Kinetics in Semiconductors (NOEKS-2000) |
| Publisher | Wiley-VCH |
| Publication date | 2000 |
| Publication status | Published - 2000 |
| Event | 6th International Workshop on Nonlinear Optics and Excitation Kinetics in Semiconductors - Marburg, Germany Duration: 10 Apr 2000 → 13 Apr 2000 Conference number: 6 |
Workshop
| Workshop | 6th International Workshop on Nonlinear Optics and Excitation Kinetics in Semiconductors |
|---|---|
| Number | 6 |
| Country/Territory | Germany |
| City | Marburg |
| Period | 10/04/2000 → 13/04/2000 |
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