Homogeneous linewidth of single InGaAs quantum dot photoluminescence

Kristjan Leosson, Wolfgang Langbein, Jacob Riis Jensen, Jørn Märcher Hvam

    Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearch

    Abstract

    We have used m-photoluminescence spectroscopy with a spectral resolution of 20 meV to measure homogeneous linewidths of single emission lines within an inhomogeneously broadened ensemble of In0.5Ga0.5As/GaAs self-assembled quantum dots. At 10K, a distribution of linewidths peaking around 50 meV is found, which corresponds to a dephasing time of 26 ps. The shape of the linewidth distribution is similar for dots lying at the high and low-energy tail of the dot ensemble.
    Original languageEnglish
    Title of host publicationProceedings, Nonlinear Optics and Excitation Kinetics in Semiconductors (NOEKS-2000)
    PublisherWiley-VCH
    Publication date2000
    Publication statusPublished - 2000
    Event6th International Workshop on Nonlinear Optics and Excitation Kinetics in Semiconductors - Marburg, Germany
    Duration: 10 Apr 200013 Apr 2000
    Conference number: 6

    Workshop

    Workshop6th International Workshop on Nonlinear Optics and Excitation Kinetics in Semiconductors
    Number6
    Country/TerritoryGermany
    CityMarburg
    Period10/04/200013/04/2000

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