Homogeneous linewidth of single InGaAs quantum dot photoluminescence

Kristjan Leosson, Wolfgang Langbein, Jacob Riis Jensen, Jørn Märcher Hvam

Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearch

Abstract

We have used m-photoluminescence spectroscopy with a spectral resolution of 20 meV to measure homogeneous linewidths of single emission lines within an inhomogeneously broadened ensemble of In0.5Ga0.5As/GaAs self-assembled quantum dots. At 10K, a distribution of linewidths peaking around 50 meV is found, which corresponds to a dephasing time of 26 ps. The shape of the linewidth distribution is similar for dots lying at the high and low-energy tail of the dot ensemble.
Original languageEnglish
Title of host publicationProceedings, Nonlinear Optics and Excitation Kinetics in Semiconductors (NOEKS-2000)
PublisherWiley-VCH
Publication date2000
Publication statusPublished - 2000
Event6th International Workshop on Nonlinear Optics and Excitation Kinetics in Semiconductors - Marburg, Germany
Duration: 10 Apr 200013 Apr 2000
Conference number: 6

Workshop

Workshop6th International Workshop on Nonlinear Optics and Excitation Kinetics in Semiconductors
Number6
CountryGermany
CityMarburg
Period10/04/200013/04/2000

Cite this

Leosson, K., Langbein, W., Jensen, J. R., & Hvam, J. M. (2000). Homogeneous linewidth of single InGaAs quantum dot photoluminescence. In Proceedings, Nonlinear Optics and Excitation Kinetics in Semiconductors (NOEKS-2000) Wiley-VCH.