We have used m-photoluminescence spectroscopy with a spectral resolution of 20 meV to measure homogeneous linewidths of single emission lines within an inhomogeneously broadened ensemble of In0.5Ga0.5As/GaAs self-assembled quantum dots. At 10K, a distribution of linewidths peaking around 50 meV is found, which corresponds to a dephasing time of 26 ps. The shape of the linewidth distribution is similar for dots lying at the high and low-energy tail of the dot ensemble.
|Title of host publication||Proceedings, Nonlinear Optics and Excitation Kinetics in Semiconductors (NOEKS-2000)|
|Publication status||Published - 2000|
|Event||6th International Workshop on Nonlinear Optics and Excitation Kinetics in Semiconductors - Marburg, Germany|
Duration: 10 Apr 2000 → 13 Apr 2000
Conference number: 6
|Workshop||6th International Workshop on Nonlinear Optics and Excitation Kinetics in Semiconductors|
|Period||10/04/2000 → 13/04/2000|
Leosson, K., Langbein, W., Jensen, J. R., & Hvam, J. M. (2000). Homogeneous linewidth of single InGaAs quantum dot photoluminescence. In Proceedings, Nonlinear Optics and Excitation Kinetics in Semiconductors (NOEKS-2000) Wiley-VCH.