Homogeneity analysis of high yield manufacturing process of mems-based pzt thick film vibrational energy harvesters

Anders Lei; Ruichao Xu; C.M. Pedersen; M. Guizzetti; K. Hansen; Erik Vilain Thomsen; Karen Birkelund

Homogeneity analysis of high yield manufacturing process of mems-based pzt thick film vibrational energy harvesters

Anders Lei, Ruichao Xu, C.M. Pedersen, M. Guizzetti, K. Hansen, Erik Vilain Thomsen, Karen Birkelund

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

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Abstract

This work presents a high yield wafer scale fabrication of MEMS-based unimorph silicon/PZT thick film vibrational energy harvesters aimed towards vibration sources with peak frequencies in the range of a few hundred Hz. By combining KOH etching with mechanical front side protection, SOI wafer to accurately define the thickness of the silicon part of the harvester and a silicon compatible PZT thick film screen-printing technique, we are able to fabricate energy harvesters on wafer scale with a yield higher than 90%. The characterization of the fabricated harvesters is focused towards the full wafer/mass-production aspect; hence the analysis of uniformity in harvested power and resonant frequency.

Original language	English
Title of host publication	Proceedings of PowerMEMS 2011
Publication date	2011
Pages	387-390
Publication status	Published - 2011
Event	11th International Workshop on Micro and Nanotechnology: Power Generation and Energy Conversion Applications - Seoul, Korea, Republic of Duration: 15 Nov 2011 → 18 Nov 2011 Conference number: 11

Conference

Conference	11th International Workshop on Micro and Nanotechnology
Number	11
Country/Territory	Korea, Republic of
City	Seoul
Period	15/11/2011 → 18/11/2011

Keywords

PZT thick film
High yield
MEMS
Energy harvester
Screen printing

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title = "Homogeneity analysis of high yield manufacturing process of mems-based pzt thick film vibrational energy harvesters",

abstract = "This work presents a high yield wafer scale fabrication of MEMS-based unimorph silicon/PZT thick film vibrational energy harvesters aimed towards vibration sources with peak frequencies in the range of a few hundred Hz. By combining KOH etching with mechanical front side protection, SOI wafer to accurately define the thickness of the silicon part of the harvester and a silicon compatible PZT thick film screen-printing technique, we are able to fabricate energy harvesters on wafer scale with a yield higher than 90%. The characterization of the fabricated harvesters is focused towards the full wafer/mass-production aspect; hence the analysis of uniformity in harvested power and resonant frequency.",

keywords = "PZT thick film, High yield, MEMS, Energy harvester, Screen printing",

author = "Anders Lei and Ruichao Xu and C.M. Pedersen and M. Guizzetti and K. Hansen and Thomsen, {Erik Vilain} and Karen Birkelund",

year = "2011",

language = "English",

pages = "387--390",

booktitle = "Proceedings of PowerMEMS 2011",

note = "11th International Workshop on Micro and Nanotechnology : Power Generation and Energy Conversion Applications, PowerMEMS 2011 ; Conference date: 15-11-2011 Through 18-11-2011",

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T1 - Homogeneity analysis of high yield manufacturing process of mems-based pzt thick film vibrational energy harvesters

AU - Lei, Anders

AU - Xu, Ruichao

AU - Pedersen, C.M.

AU - Guizzetti, M.

AU - Hansen, K.

AU - Thomsen, Erik Vilain

AU - Birkelund, Karen

N1 - Conference code: 11

PY - 2011

Y1 - 2011

N2 - This work presents a high yield wafer scale fabrication of MEMS-based unimorph silicon/PZT thick film vibrational energy harvesters aimed towards vibration sources with peak frequencies in the range of a few hundred Hz. By combining KOH etching with mechanical front side protection, SOI wafer to accurately define the thickness of the silicon part of the harvester and a silicon compatible PZT thick film screen-printing technique, we are able to fabricate energy harvesters on wafer scale with a yield higher than 90%. The characterization of the fabricated harvesters is focused towards the full wafer/mass-production aspect; hence the analysis of uniformity in harvested power and resonant frequency.

AB - This work presents a high yield wafer scale fabrication of MEMS-based unimorph silicon/PZT thick film vibrational energy harvesters aimed towards vibration sources with peak frequencies in the range of a few hundred Hz. By combining KOH etching with mechanical front side protection, SOI wafer to accurately define the thickness of the silicon part of the harvester and a silicon compatible PZT thick film screen-printing technique, we are able to fabricate energy harvesters on wafer scale with a yield higher than 90%. The characterization of the fabricated harvesters is focused towards the full wafer/mass-production aspect; hence the analysis of uniformity in harvested power and resonant frequency.

KW - PZT thick film

KW - High yield

KW - MEMS

KW - Energy harvester

KW - Screen printing

M3 - Article in proceedings

SP - 387

EP - 390

BT - Proceedings of PowerMEMS 2011

T2 - 11th International Workshop on Micro and Nanotechnology

Y2 - 15 November 2011 through 18 November 2011

ER -

Homogeneity analysis of high yield manufacturing process of mems-based pzt thick film vibrational energy harvesters

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