Homogeneity analysis of high yield manufacturing process of mems-based pzt thick film vibrational energy harvesters

Anders Lei, Ruichao Xu, C.M. Pedersen, M. Guizzetti, K. Hansen, Erik Vilain Thomsen, Karen Birkelund

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    Abstract

    This work presents a high yield wafer scale fabrication of MEMS-based unimorph silicon/PZT thick film vibrational energy harvesters aimed towards vibration sources with peak frequencies in the range of a few hundred Hz. By combining KOH etching with mechanical front side protection, SOI wafer to accurately define the thickness of the silicon part of the harvester and a silicon compatible PZT thick film screen-printing technique, we are able to fabricate energy harvesters on wafer scale with a yield higher than 90%. The characterization of the fabricated harvesters is focused towards the full wafer/mass-production aspect; hence the analysis of uniformity in harvested power and resonant frequency.
    Original languageEnglish
    Title of host publicationProceedings of PowerMEMS 2011
    Publication date2011
    Pages387-390
    Publication statusPublished - 2011
    EventPower MEMS 2011 - Seoul, Republic of Korea
    Duration: 1 Jan 2011 → …

    Conference

    ConferencePower MEMS 2011
    CitySeoul, Republic of Korea
    Period01/01/2011 → …

    Keywords

    • PZT thick film
    • High yield
    • MEMS
    • Energy harvester
    • Screen printing

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