Abstract
This paper presents a homogeneity analysis of a high yield wafer scale fabrication of MEMS-based unimorph silicon/PZT thick film vibration energy harvesters aimed towards vibration sources with peak vibrations in the range of around 300Hz. A wafer with a yield of 91% (41/45 devices) has been characterized. Measurements of the open circuit voltage showed a relative difference of 32.6% between the standard deviation and average. Measurements of the capacitance and resonant frequency showed a relative difference between the standard deviation and average value of 4.3% and 2.9% respectively, thus indicating that the main variation in open circuit voltage performance is caused by varying quality factor. The average resonant frequency was measured to 333Hz with a standard variation of 9.8Hz and a harvesting bandwidth of 5-10Hz. A maximum power output of 39.3μW was achieved at 1g for the best performing harvester.
Original language | English |
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Journal | Procedia Engineering |
Volume | 47 |
Pages (from-to) | 554-557 |
ISSN | 1877-7058 |
DOIs | |
Publication status | Published - 2012 |
Event | Eurosensors 2012: 26th European Conference on Solid-State Transducers - Krakow, Poland Duration: 9 Sept 2012 → 12 Sept 2012 Conference number: 26 |
Conference
Conference | Eurosensors 2012 |
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Number | 26 |
Country/Territory | Poland |
City | Krakow |
Period | 09/09/2012 → 12/09/2012 |
Keywords
- Energy harvesting
- Vibration harvesting
- MEMS
- PZT
- Thick film