Homogeneity Analysis of a MEMS-based PZT Thick Film Vibration Energy Harvester Manufacturing Process

Anders Lei, Ruichao Xu, Louise M. Borregaard, Michele Guizzetti, Erik V. Thomsen, Jan Dziuban (Editor), Rafal Walczak (Editor)

    Research output: Contribution to journalConference articlepeer-review


    This paper presents a homogeneity analysis of a high yield wafer scale fabrication of MEMS-based unimorph silicon/PZT thick film vibration energy harvesters aimed towards vibration sources with peak vibrations in the range of around 300Hz. A wafer with a yield of 91% (41/45 devices) has been characterized. Measurements of the open circuit voltage showed a relative difference of 32.6% between the standard deviation and average. Measurements of the capacitance and resonant frequency showed a relative difference between the standard deviation and average value of 4.3% and 2.9% respectively, thus indicating that the main variation in open circuit voltage performance is caused by varying quality factor. The average resonant frequency was measured to 333Hz with a standard variation of 9.8Hz and a harvesting bandwidth of 5-10Hz. A maximum power output of 39.3μW was achieved at 1g for the best performing harvester.
    Original languageEnglish
    JournalProcedia Engineering
    Pages (from-to)554-557
    Publication statusPublished - 2012
    EventEurosensors 2012: 26th European Conference on Solid-State Transducers - Krakow, Poland
    Duration: 9 Sep 201212 Sep 2012
    Conference number: 26


    ConferenceEurosensors 2012


    • Energy harvesting
    • Vibration harvesting
    • MEMS
    • PZT
    • Thick film


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