Highly Linear D-Band Low-Noise Amplifier with 8.5dB Noise Figure in InP-DHBT Technology

M. Hossain; R. Doerner; H. Yacoub; T. K. Johansen; W. Heinrich; V. Krozer

doi:10.23919/EuMIC50153.2022.9783820

Highly Linear D-Band Low-Noise Amplifier with 8.5dB Noise Figure in InP-DHBT Technology

M. Hossain^*, R. Doerner, H. Yacoub, T. K. Johansen, W. Heinrich, V. Krozer

^*Corresponding author for this work

Leibniz-Institut für Höchstfrequenztechnik

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

Abstract

This paper presents a D-band low noise amplifier (LNA) using an 0.5 μm InP-DHBT technology. The LNA circuit design is based on a 2-way combined cascode unit power cell. The measured LNA exhibits 10 to 16 dB small signal gain and 11 to 8.5 dB noise figure (NF) in the frequency range from 140 to 170 GHz. The dc power consumption is only 103 mW and results in a power-added efficiency (PAE) of 11 % at 146 GHz. The output 1dB compression point (OP_1dB) reaches 10 dBm at 146 GHz. The chip area is only 1.6 × 1.1 mm². To the best knowledge of the authors, the performance combination in terms of low NF, high linearity as well as PAE beyond 140 GHz is unique so far.

Original language	English
Title of host publication	Proceedings of the 16th European Microwave Integrated Circuits Conference
Publisher	IEEE
Publication date	2022
Pages	140-143
ISBN (Electronic)	978-2-87487-064-4
DOIs	https://doi.org/10.23919/EuMIC50153.2022.9783820
Publication status	Published - 2022
Event	16^th European Microwave Integrated Circuits Conference - London, United Kingdom Duration: 13 Feb 2022 → 18 Feb 2022

Conference

Conference	16^th European Microwave Integrated Circuits Conference
Country/Territory	United Kingdom
City	London
Period	13/02/2022 → 18/02/2022

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10.23919/EuMIC50153.2022.9783820

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title = "Highly Linear D-Band Low-Noise Amplifier with 8.5dB Noise Figure in InP-DHBT Technology",

abstract = "This paper presents a D-band low noise amplifier (LNA) using an 0.5 μm InP-DHBT technology. The LNA circuit design is based on a 2-way combined cascode unit power cell. The measured LNA exhibits 10 to 16 dB small signal gain and 11 to 8.5 dB noise figure (NF) in the frequency range from 140 to 170 GHz. The dc power consumption is only 103 mW and results in a power-added efficiency (PAE) of 11 % at 146 GHz. The output 1dB compression point (OP_1dB) reaches 10 dBm at 146 GHz. The chip area is only 1.6 × 1.1 mm2. To the best knowledge of the authors, the performance combination in terms of low NF, high linearity as well as PAE beyond 140 GHz is unique so far.",

author = "M. Hossain and R. Doerner and H. Yacoub and Johansen, {T. K.} and W. Heinrich and V. Krozer",

year = "2022",

doi = "10.23919/EuMIC50153.2022.9783820",

language = "English",

pages = "140--143",

booktitle = "Proceedings of the 16th European Microwave Integrated Circuits Conference",

publisher = "IEEE",

address = "United States",

note = "16<sup>th</sup> European Microwave Integrated Circuits Conference, EuMIC 2021 ; Conference date: 13-02-2022 Through 18-02-2022",

}

Hossain, M, Doerner, R, Yacoub, H, Johansen, TK, Heinrich, W & Krozer, V 2022, Highly Linear D-Band Low-Noise Amplifier with 8.5dB Noise Figure in InP-DHBT Technology. in Proceedings of the 16th European Microwave Integrated Circuits Conference. IEEE, pp. 140-143, 16^th European Microwave Integrated Circuits Conference, London, United Kingdom, 13/02/2022. https://doi.org/10.23919/EuMIC50153.2022.9783820

TY - GEN

T1 - Highly Linear D-Band Low-Noise Amplifier with 8.5dB Noise Figure in InP-DHBT Technology

AU - Hossain, M.

AU - Doerner, R.

AU - Yacoub, H.

AU - Johansen, T. K.

AU - Heinrich, W.

AU - Krozer, V.

PY - 2022

Y1 - 2022

N2 - This paper presents a D-band low noise amplifier (LNA) using an 0.5 μm InP-DHBT technology. The LNA circuit design is based on a 2-way combined cascode unit power cell. The measured LNA exhibits 10 to 16 dB small signal gain and 11 to 8.5 dB noise figure (NF) in the frequency range from 140 to 170 GHz. The dc power consumption is only 103 mW and results in a power-added efficiency (PAE) of 11 % at 146 GHz. The output 1dB compression point (OP_1dB) reaches 10 dBm at 146 GHz. The chip area is only 1.6 × 1.1 mm2. To the best knowledge of the authors, the performance combination in terms of low NF, high linearity as well as PAE beyond 140 GHz is unique so far.

AB - This paper presents a D-band low noise amplifier (LNA) using an 0.5 μm InP-DHBT technology. The LNA circuit design is based on a 2-way combined cascode unit power cell. The measured LNA exhibits 10 to 16 dB small signal gain and 11 to 8.5 dB noise figure (NF) in the frequency range from 140 to 170 GHz. The dc power consumption is only 103 mW and results in a power-added efficiency (PAE) of 11 % at 146 GHz. The output 1dB compression point (OP_1dB) reaches 10 dBm at 146 GHz. The chip area is only 1.6 × 1.1 mm2. To the best knowledge of the authors, the performance combination in terms of low NF, high linearity as well as PAE beyond 140 GHz is unique so far.

U2 - 10.23919/EuMIC50153.2022.9783820

DO - 10.23919/EuMIC50153.2022.9783820

M3 - Article in proceedings

SP - 140

EP - 143

BT - Proceedings of the 16th European Microwave Integrated Circuits Conference

PB - IEEE

T2 - 16<sup>th</sup> European Microwave Integrated Circuits Conference

Y2 - 13 February 2022 through 18 February 2022

ER -

Highly Linear D-Band Low-Noise Amplifier with 8.5dB Noise Figure in InP-DHBT Technology

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