Abstract
This work reports a high-isolation SPDT switch re-alized in an 800-nm InP DHBT process. The circuit is based on shunt topology employing two cascaded shunt stages. This enhances the isolation while introducing only marginally higher insertion loss. Due to the low intrinsic capacitance of the InP DHBT transistors with 350 GHz fmax, the circuit achieves a bandwidth of from 90 to 170 GHz, with an overall isolation of more than 45 dB and an insertion loss of 3.5 … 5 dB. Moreover, the circuit achieves highly linear operation with measured Pin1dB exceeding 15 dBm at 110 GHz frequency. It consumes a DC power of 5 mW only.
| Original language | English |
|---|---|
| Title of host publication | Proceedings of the 2019 IEEE MTT-S International Microwave Symposium (IMS) |
| Number of pages | 4 |
| Publisher | IEEE |
| Publication date | 2019 |
| Pages | 1011-1014 |
| Article number | WEIF2-22 |
| ISBN (Electronic) | 978-1-7281-1309-8 |
| Publication status | Published - 2019 |
| Event | 2019 IEEE MTT-S International Microwave Symposium - Boston Convention Center, Boston, United States Duration: 2 Jun 2019 → 7 Jun 2019 https://ieeexplore.ieee.org/xpl/conhome/8697340/proceeding |
Conference
| Conference | 2019 IEEE MTT-S International Microwave Symposium |
|---|---|
| Location | Boston Convention Center |
| Country/Territory | United States |
| City | Boston |
| Period | 02/06/2019 → 07/06/2019 |
| Internet address |
Keywords
- Single-Pole-Double-Throw
- InP double hetero-junction bipolar transistor (DHBT)
- Monolithic microwave integrated circuit (MMIC)
- High isolation SPDT switch