Highly linear 90-170 GHz SPDT Switch with High Isolation for Fully Integrated InP Transceivers

Tanjil Shivan*, Maruf Hossain, Ralf Doerner, Steffen Schulz, Tom Keinicke Johansen, Sebastian Boppel, Wolfgang Heinrich, Viktor Krozer

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review


This work reports a high-isolation SPDT switch re-alized in an 800-nm InP DHBT process. The circuit is based on shunt topology employing two cascaded shunt stages. This enhances the isolation while introducing only marginally higher insertion loss. Due to the low intrinsic capacitance of the InP DHBT transistors with 350 GHz fmax, the circuit achieves a bandwidth of from 90 to 170 GHz, with an overall isolation of more than 45 dB and an insertion loss of 3.5 … 5 dB. Moreover, the circuit achieves highly linear operation with measured Pin1dB exceeding 15 dBm at 110 GHz frequency. It consumes a DC power of 5 mW only.
Original languageEnglish
Title of host publicationProceedings of the 2019 IEEE MTT-S International Microwave Symposium (IMS)
Number of pages4
Publication date2019
Article numberWEIF2-22
ISBN (Electronic)978-1-7281-1309-8
Publication statusPublished - 2019
Event2019 IEEE MTT International Microwave Symposium - Boston Convention Center, Boston, United States
Duration: 2 Jun 20197 Jun 2019


Conference2019 IEEE MTT International Microwave Symposium
LocationBoston Convention Center
Country/TerritoryUnited States
Internet address


  • Single-Pole-Double-Throw
  • InP double hetero-junction bipolar transistor (DHBT)
  • Monolithic microwave integrated circuit (MMIC)
  • High isolation SPDT switch


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