Highly linear 90-170 GHz SPDT Switch with High Isolation for Fully Integrated InP Transceivers

Tanjil Shivan*, Maruf Hossain, Ralf Doerner, Steffen Schulz, Tom Keinicke Johansen, Sebastian Boppel, Wolfgang Heinrich, Viktor Krozer

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review

Abstract

This work reports a high-isolation SPDT switch re-alized in an 800-nm InP DHBT process. The circuit is based on shunt topology employing two cascaded shunt stages. This enhances the isolation while introducing only marginally higher insertion loss. Due to the low intrinsic capacitance of the InP DHBT transistors with 350 GHz fmax, the circuit achieves a bandwidth of from 90 to 170 GHz, with an overall isolation of more than 45 dB and an insertion loss of 3.5 … 5 dB. Moreover, the circuit achieves highly linear operation with measured Pin1dB exceeding 15 dBm at 110 GHz frequency. It consumes a DC power of 5 mW only.
Original languageEnglish
Title of host publicationProceedings of the 2019 IEEE MTT-S International Microwave Symposium (IMS)
Number of pages4
PublisherIEEE
Publication date2019
Pages1011-1014
Article numberWEIF2-22
ISBN (Electronic)978-1-7281-1309-8
Publication statusPublished - 2019
Event2019 IEEE MTT International Microwave Symposium - Boston Convention Center, Boston, United States
Duration: 2 Jun 20197 Jun 2019
https://ims-ieee.org/

Conference

Conference2019 IEEE MTT International Microwave Symposium
LocationBoston Convention Center
CountryUnited States
CityBoston
Period02/06/201907/06/2019
Internet address

Keywords

  • Single-Pole-Double-Throw
  • InP double hetero-junction bipolar transistor (DHBT)
  • Monolithic microwave integrated circuit (MMIC)
  • High isolation SPDT switch

Cite this

Shivan, T., Hossain, M., Doerner, R., Schulz, S., Johansen, T. K., Boppel, S., ... Krozer, V. (2019). Highly linear 90-170 GHz SPDT Switch with High Isolation for Fully Integrated InP Transceivers. In Proceedings of the 2019 IEEE MTT-S International Microwave Symposium (IMS) (pp. 1011-1014). [WEIF2-22] IEEE.
Shivan, Tanjil ; Hossain, Maruf ; Doerner, Ralf ; Schulz, Steffen ; Johansen, Tom Keinicke ; Boppel, Sebastian ; Heinrich, Wolfgang ; Krozer, Viktor. / Highly linear 90-170 GHz SPDT Switch with High Isolation for Fully Integrated InP Transceivers. Proceedings of the 2019 IEEE MTT-S International Microwave Symposium (IMS). IEEE, 2019. pp. 1011-1014
@inproceedings{4c0d4fb4ab92415c81373e6bcc2d67f9,
title = "Highly linear 90-170 GHz SPDT Switch with High Isolation for Fully Integrated InP Transceivers",
abstract = "This work reports a high-isolation SPDT switch re-alized in an 800-nm InP DHBT process. The circuit is based on shunt topology employing two cascaded shunt stages. This enhances the isolation while introducing only marginally higher insertion loss. Due to the low intrinsic capacitance of the InP DHBT transistors with 350 GHz fmax, the circuit achieves a bandwidth of from 90 to 170 GHz, with an overall isolation of more than 45 dB and an insertion loss of 3.5 … 5 dB. Moreover, the circuit achieves highly linear operation with measured Pin1dB exceeding 15 dBm at 110 GHz frequency. It consumes a DC power of 5 mW only.",
keywords = "Single-Pole-Double-Throw, InP double hetero-junction bipolar transistor (DHBT), Monolithic microwave integrated circuit (MMIC), High isolation SPDT switch",
author = "Tanjil Shivan and Maruf Hossain and Ralf Doerner and Steffen Schulz and Johansen, {Tom Keinicke} and Sebastian Boppel and Wolfgang Heinrich and Viktor Krozer",
year = "2019",
language = "English",
pages = "1011--1014",
booktitle = "Proceedings of the 2019 IEEE MTT-S International Microwave Symposium (IMS)",
publisher = "IEEE",
address = "United States",

}

Shivan, T, Hossain, M, Doerner, R, Schulz, S, Johansen, TK, Boppel, S, Heinrich, W & Krozer, V 2019, Highly linear 90-170 GHz SPDT Switch with High Isolation for Fully Integrated InP Transceivers. in Proceedings of the 2019 IEEE MTT-S International Microwave Symposium (IMS)., WEIF2-22, IEEE, pp. 1011-1014, 2019 IEEE MTT International Microwave Symposium, Boston, United States, 02/06/2019.

Highly linear 90-170 GHz SPDT Switch with High Isolation for Fully Integrated InP Transceivers. / Shivan, Tanjil; Hossain, Maruf; Doerner, Ralf; Schulz, Steffen; Johansen, Tom Keinicke; Boppel, Sebastian; Heinrich, Wolfgang; Krozer, Viktor.

Proceedings of the 2019 IEEE MTT-S International Microwave Symposium (IMS). IEEE, 2019. p. 1011-1014 WEIF2-22.

Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review

TY - GEN

T1 - Highly linear 90-170 GHz SPDT Switch with High Isolation for Fully Integrated InP Transceivers

AU - Shivan, Tanjil

AU - Hossain, Maruf

AU - Doerner, Ralf

AU - Schulz, Steffen

AU - Johansen, Tom Keinicke

AU - Boppel, Sebastian

AU - Heinrich, Wolfgang

AU - Krozer, Viktor

PY - 2019

Y1 - 2019

N2 - This work reports a high-isolation SPDT switch re-alized in an 800-nm InP DHBT process. The circuit is based on shunt topology employing two cascaded shunt stages. This enhances the isolation while introducing only marginally higher insertion loss. Due to the low intrinsic capacitance of the InP DHBT transistors with 350 GHz fmax, the circuit achieves a bandwidth of from 90 to 170 GHz, with an overall isolation of more than 45 dB and an insertion loss of 3.5 … 5 dB. Moreover, the circuit achieves highly linear operation with measured Pin1dB exceeding 15 dBm at 110 GHz frequency. It consumes a DC power of 5 mW only.

AB - This work reports a high-isolation SPDT switch re-alized in an 800-nm InP DHBT process. The circuit is based on shunt topology employing two cascaded shunt stages. This enhances the isolation while introducing only marginally higher insertion loss. Due to the low intrinsic capacitance of the InP DHBT transistors with 350 GHz fmax, the circuit achieves a bandwidth of from 90 to 170 GHz, with an overall isolation of more than 45 dB and an insertion loss of 3.5 … 5 dB. Moreover, the circuit achieves highly linear operation with measured Pin1dB exceeding 15 dBm at 110 GHz frequency. It consumes a DC power of 5 mW only.

KW - Single-Pole-Double-Throw

KW - InP double hetero-junction bipolar transistor (DHBT)

KW - Monolithic microwave integrated circuit (MMIC)

KW - High isolation SPDT switch

M3 - Article in proceedings

SP - 1011

EP - 1014

BT - Proceedings of the 2019 IEEE MTT-S International Microwave Symposium (IMS)

PB - IEEE

ER -

Shivan T, Hossain M, Doerner R, Schulz S, Johansen TK, Boppel S et al. Highly linear 90-170 GHz SPDT Switch with High Isolation for Fully Integrated InP Transceivers. In Proceedings of the 2019 IEEE MTT-S International Microwave Symposium (IMS). IEEE. 2019. p. 1011-1014. WEIF2-22