High-Confinement, High-Q Microring Resonators on Silicon Carbide-On-Insulator (SiCOI)

Research output: Chapter in Book/Report/Conference proceedingArticle in proceedings – Annual report year: 2018Researchpeer-review

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We realize silicon carbide-on-insulator platform based on crystalline 4H SiC and demonstrate high confinement SiC resonators with sub-micron waveguide cross-sectional dimension. The obtained Q (57,000) is the highest Q reported for SiC microring resonators.
Original languageEnglish
Title of host publicationProceedings of Asia Communications and Photonics Conference
Number of pages3
PublisherIEEE
Publication date2018
ISBN (Print)9781538661581
DOIs
Publication statusPublished - 2018
Event2018 Asia Communications and Photonics Conference
- New Century Grand Hotel, Hangzhou, China
Duration: 26 Oct 201829 Oct 2018
http://www.acp2018.net/

Conference

Conference2018 Asia Communications and Photonics Conference
LocationNew Century Grand Hotel
CountryChina
CityHangzhou
Period26/10/201829/10/2018
Internet address
CitationsWeb of Science® Times Cited: No match on DOI

    Research areas

  • Optical devices, Resonators, Nonlinear optics, Integrated optics

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