HIGH TEMPERATURE RESONANCE LOSSES IN SILICON-DOPED YTTRIUM-IRON GARNET (YIG)

D. J. Epstein; L. Tocci

doi:10.1063/1.1755026

HIGH TEMPERATURE RESONANCE LOSSES IN SILICON-DOPED YTTRIUM-IRON GARNET (YIG)

D. J. Epstein, L. Tocci

Research output: Contribution to journal › Journal article › Research › peer-review

501 Downloads (Pure)

Abstract

The ferrimagnetic resonance linewidth of silicon-doped YIG, measured as a function of temperature at 13.4 kMHz, is found to show a pronounced peak at 105°C. The anisotropic behavior of this peak is in good agreement with the four-level valence-exchange model proposed by Clogston. The model yields for the electron ordering energy a value 5 × 10-4 eV which agrees closely with the energy deduced from magnetic anneal studies. The activation energy for electron transfer (0.25 eV) is virtually identical with values reported in investigations of electrical conductivity and acoustic loss. ©1967 The American Institute of Physics

Original language	English
Journal	Applied Physics Letters
Volume	11
Issue number	2
Pages (from-to)	55-58
ISSN	0003-6951
DOIs	https://doi.org/10.1063/1.1755026
Publication status	Published - 1967

Bibliographical note

Copyright (1967) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

Access to Document

10.1063/1.1755026

EpsteinFinal published version, 309 KB

http://link.aip.org/link/?APPLAB/11/55/1

OpenUrl availability

Full text

Cite this

@article{21ac81a02ea84c4cb4cd31c39293d78a,

title = "HIGH TEMPERATURE RESONANCE LOSSES IN SILICON-DOPED YTTRIUM-IRON GARNET (YIG)",

abstract = "The ferrimagnetic resonance linewidth of silicon-doped YIG, measured as a function of temperature at 13.4 kMHz, is found to show a pronounced peak at 105°C. The anisotropic behavior of this peak is in good agreement with the four-level valence-exchange model proposed by Clogston. The model yields for the electron ordering energy a value 5 × 10-4 eV which agrees closely with the energy deduced from magnetic anneal studies. The activation energy for electron transfer (0.25 eV) is virtually identical with values reported in investigations of electrical conductivity and acoustic loss. {\textcopyright}1967 The American Institute of Physics",

author = "Epstein, {D. J.} and L. Tocci",

note = "Copyright (1967) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.",

year = "1967",

doi = "10.1063/1.1755026",

language = "English",

volume = "11",

pages = "55--58",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "2",

}

TY - JOUR

T1 - HIGH TEMPERATURE RESONANCE LOSSES IN SILICON-DOPED YTTRIUM-IRON GARNET (YIG)

AU - Epstein, D. J.

AU - Tocci, L.

N1 - Copyright (1967) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

PY - 1967

Y1 - 1967

N2 - The ferrimagnetic resonance linewidth of silicon-doped YIG, measured as a function of temperature at 13.4 kMHz, is found to show a pronounced peak at 105°C. The anisotropic behavior of this peak is in good agreement with the four-level valence-exchange model proposed by Clogston. The model yields for the electron ordering energy a value 5 × 10-4 eV which agrees closely with the energy deduced from magnetic anneal studies. The activation energy for electron transfer (0.25 eV) is virtually identical with values reported in investigations of electrical conductivity and acoustic loss. ©1967 The American Institute of Physics

AB - The ferrimagnetic resonance linewidth of silicon-doped YIG, measured as a function of temperature at 13.4 kMHz, is found to show a pronounced peak at 105°C. The anisotropic behavior of this peak is in good agreement with the four-level valence-exchange model proposed by Clogston. The model yields for the electron ordering energy a value 5 × 10-4 eV which agrees closely with the energy deduced from magnetic anneal studies. The activation energy for electron transfer (0.25 eV) is virtually identical with values reported in investigations of electrical conductivity and acoustic loss. ©1967 The American Institute of Physics

U2 - 10.1063/1.1755026

DO - 10.1063/1.1755026

M3 - Journal article

SN - 0003-6951

VL - 11

SP - 55

EP - 58

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 2

ER -

HIGH TEMPERATURE RESONANCE LOSSES IN SILICON-DOPED YTTRIUM-IRON GARNET (YIG)

Abstract

Bibliographical note

Access to Document

OpenUrl availability

Fingerprint

Cite this