High speed terahertz modulation from metamaterials with embedded high electron mobility transistors

D. Shrekenhamer, S. Rout, A.C. Strikwerda, C. Bingham, R.D. Averitt, S. Sonkusale, W.J. Padilla

Research output: Contribution to journalJournal articleResearchpeer-review

Abstract

We present a computational and experimental study of a novel terahertz (THz) device resulting from hybridization of metamaterials with pseudomorphic high electron mobility transistors (HEMTs), fabricated in a commercial gallium arsenide (GaAs) process. Monolithic integration of transistors into each unit cell permits modulation at the metamaterial resonant frequency of 0.46 THz. Characterization is performed using a THz time-domain spectrometer (THz-TDS) and we demonstrate switching values over 30%, and THz modulation at frequencies up to 10 megahertz (MHz). Our results demonstrate the viability of incorporating metamaterials into mature semiconductor technologies and establish a new path toward achieving electrically tunable THz devices. (C) 2011 Optical Society of America
Original languageEnglish
JournalOptics Express
Volume19
Issue number10
Pages (from-to)9968-9975
ISSN1094-4087
DOIs
Publication statusPublished - 2011
Externally publishedYes

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