High-resolution three-dimensional mapping of semiconductor dopant potentials

AC Twitchett; TJV Yates; SB Newcomb; Rafal E. Dunin-Borkowski; PA Midgley

doi:10.1021/nl070858n

High-resolution three-dimensional mapping of semiconductor dopant potentials

AC Twitchett
, TJV Yates
, SB Newcomb
, Rafal E. Dunin-Borkowski
, PA Midgley

Research output: Contribution to journal › Journal article › Research › peer-review

Abstract

Semiconductor device structures are becoming increasingly three-dimensional at the nanometer scale. A key issue that must be addressed to enable future device development is the three-dimensional mapping of dopant distributions, ideally under "working conditions". Here we demonstrate how a combination of electron holography and electron tomography can be used to determine quantitatively the three-dimensional electrostatic potential in an electrically biased semiconductor device with nanometer spatial resolution.

Original language	English
Journal	Nano Letters
Volume	7
Issue number	7
Pages (from-to)	2020-2023
ISSN	1530-6984
DOIs	https://doi.org/10.1021/nl070858n
Publication status	Published - 2007

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title = "High-resolution three-dimensional mapping of semiconductor dopant potentials",

abstract = "Semiconductor device structures are becoming increasingly three-dimensional at the nanometer scale. A key issue that must be addressed to enable future device development is the three-dimensional mapping of dopant distributions, ideally under {"}working conditions{"}. Here we demonstrate how a combination of electron holography and electron tomography can be used to determine quantitatively the three-dimensional electrostatic potential in an electrically biased semiconductor device with nanometer spatial resolution.",

author = "AC Twitchett and TJV Yates and SB Newcomb and Dunin-Borkowski, \{Rafal E.\} and PA Midgley",

year = "2007",

doi = "10.1021/nl070858n",

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journal = "Nano Letters",

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T1 - High-resolution three-dimensional mapping of semiconductor dopant potentials

AU - Twitchett, AC

AU - Yates, TJV

AU - Newcomb, SB

AU - Dunin-Borkowski, Rafal E.

AU - Midgley, PA

PY - 2007

Y1 - 2007

N2 - Semiconductor device structures are becoming increasingly three-dimensional at the nanometer scale. A key issue that must be addressed to enable future device development is the three-dimensional mapping of dopant distributions, ideally under "working conditions". Here we demonstrate how a combination of electron holography and electron tomography can be used to determine quantitatively the three-dimensional electrostatic potential in an electrically biased semiconductor device with nanometer spatial resolution.

AB - Semiconductor device structures are becoming increasingly three-dimensional at the nanometer scale. A key issue that must be addressed to enable future device development is the three-dimensional mapping of dopant distributions, ideally under "working conditions". Here we demonstrate how a combination of electron holography and electron tomography can be used to determine quantitatively the three-dimensional electrostatic potential in an electrically biased semiconductor device with nanometer spatial resolution.

U2 - 10.1021/nl070858n

DO - 10.1021/nl070858n

M3 - Journal article

SN - 1530-6984

VL - 7

SP - 2020

EP - 2023

JO - Nano Letters

JF - Nano Letters

IS - 7

ER -

High-resolution three-dimensional mapping of semiconductor dopant potentials

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