High-resolution three-dimensional mapping of semiconductor dopant potentials

AC Twitchett, TJV Yates, SB Newcomb, Rafal E. Dunin-Borkowski, PA Midgley

    Research output: Contribution to journalJournal articleResearchpeer-review

    Abstract

    Semiconductor device structures are becoming increasingly three-dimensional at the nanometer scale. A key issue that must be addressed to enable future device development is the three-dimensional mapping of dopant distributions, ideally under "working conditions". Here we demonstrate how a combination of electron holography and electron tomography can be used to determine quantitatively the three-dimensional electrostatic potential in an electrically biased semiconductor device with nanometer spatial resolution.
    Original languageEnglish
    JournalNano Letters
    Volume7
    Issue number7
    Pages (from-to)2020-2023
    ISSN1530-6984
    DOIs
    Publication statusPublished - 2007

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