High-Resolution Single Photon Level Storage of Telecom Light Based on Thin Film Lithium Niobate Photonics

Çağın Ekici*, Yonghe Yu, Jeremy C. Adcock, Alif Laila Muthali, Heyun Tan, Zhongjin Lin, Hao Li, Leif Katsuo Oxenløwe, Xinlun Cai, Yunhong Ding*

*Corresponding author for this work

Research output: Contribution to journalJournal articleResearchpeer-review

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Abstract

This study presents an experimental analysis of high-resolution single photon buffers based on low-loss thin film lithium niobate (TFLN) photonic devices operating at room temperature. While dynamically controlling writing and reading operations within picosecond timescales poses a challenge, the devices are capable of resolving 102.8 ± 4.6 ps time step with -0.89 dB loss per round-trip and 197.7 ± 6.6 ps time steps with -1.29 dB loss per round-trip, respectively. These results imply that the devices are at the cutting edge of on-chip technology, performing in the current state of the art at the single photon level. Both of the single photon buffers do not introduce any detrimental effects and provide a high signal-to-noise ratio (SNR). The room-temperature, low-loss, and voltage-controlled TFLN buffers combine scalable architecture with relatively high buffering capacity in the sub-nanosecond regime and are expected to unlock many novel photonics applications such as temporally multiplexed single photon sources.

Original languageEnglish
Article number2300195
JournalAdvanced Quantum Technologies
Number of pages6
ISSN2511-9044
DOIs
Publication statusAccepted/In press - 2024

Bibliographical note

Funding Information:
Ç.E. and Y.Y. contributed equally to this work. The authors acknowledged funding from Villum Fonden Young Investigator project QUANPIC (Ref. 00025298) and Danish National Research Foundation Center of Excellence, SPOC (Ref. DNRF123).

Publisher Copyright:
© 2023 The Authors. Advanced Quantum Technologies published by Wiley-VCH GmbH.

Keywords

  • Electro-optic devices
  • Integrated quantum photonics
  • Single photon buffer

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