High resolution 100 kV electron beam lithography in thin layers of the negative resist SU-8 is demonstrated. Sub-30 nm lines with a pitch down to 300 nm are written in 100 nm thick SU-8. Two reactive ion etch processes are developed in order to transfer the SU-8 structures into a silicon substrate, a Soft O-2-Plasma process to remove SU-8 residues on the silicon surface after development and a highly anisotropic SF6/O-2/CHF3 based process to transfer the pattern into a silicon substrate, with selectivity between silicon and SU-8 of approximately 2. 30 nm lines patterned in SU-8 are successfully transferred into a silicon substrate, which is used as a stamp in a nanoimprint lithography process to fabricate a nanochannel device for DNA stretching experiments.
|Publication status||Published - 2006|
Olsen, B. B., Jakobsen, S., Schmidt, M. S., Skjolding, L. H. D., Shi, P., Bøggild, P., Tegenfeldt, J. O., & Kristensen, A. (2006). High resolution 100 kV electron beam lithography in SU-8. Microelectronic Engineering, 83(4-9), 1609-1612.