High Quality InAs/InSb nanowire heterostructrues grown by metalorganic vapour phase epitaxy

Growth and structural analysis of epitaxial InAs/InSb nanowire heterostructures are demonstrated for the first time. InSb segments are found to be perfect crystals, free of stacking faults or other major defects, and have a sharp interface with InAs (see image). After growth the seed particle is a single crystal nearly lattice matched to the nanowire. InSb segments are n-type and form ohmic contacts with Ni/Au electrodes.