Abstract
Growth and structural analysis of epitaxial InAs/InSb nanowire heterostructures are demonstrated for the first time. InSb segments are found to be perfect crystals, free of stacking faults or other major defects, and have a sharp interface with InAs (see image). After growth the seed particle is a single crystal nearly lattice matched to the nanowire. InSb segments are n-type and form ohmic contacts with Ni/Au electrodes.
Original language | English |
---|---|
Journal | Small |
Volume | 4 |
Issue number | 7 |
Pages (from-to) | 878-882 |
ISSN | 1613-6810 |
DOIs | |
Publication status | Published - 2008 |