High Quality InAs/InSb nanowire heterostructrues grown by metalorganic vapour phase epitaxy

Philippe Caroff, Jakob Birkedal Wagner, Kimberly A. Dick, Henrik A. Nilsson, Mattias Jeppsson, Knut Deppert, Lars Samuelson, L. Reine Wallenberg, Lars-Erik Wernersson

    Research output: Contribution to journalJournal articleResearchpeer-review

    Abstract

    Growth and structural analysis of epitaxial InAs/InSb nanowire heterostructures are demonstrated for the first time. InSb segments are found to be perfect crystals, free of stacking faults or other major defects, and have a sharp interface with InAs (see image). After growth the seed particle is a single crystal nearly lattice matched to the nanowire. InSb segments are n-type and form ohmic contacts with Ni/Au electrodes.
    Original languageEnglish
    JournalSmall
    Volume4
    Issue number7
    Pages (from-to)878-882
    ISSN1613-6810
    DOIs
    Publication statusPublished - 2008

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