High quality factor GaAs microcavity with buried bullseye defects

K. Winkler, Niels Gregersen, T. Hayrynen, B. Bradel, A. Schade, M. Emmerling, M. Kamp, S. Höfling, C. Schneider

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Abstract

The development of high quality factor solid-state microcavities with low mode volumes has paved the way towards on-chip cavity quantum electrodynamics experiments and the development of high-performance nanophotonic devices. Here, we report on the implementation of a new kind of solid-state vertical microcavity, which allows for confinement of the electromagnetic field in the lateral direction without deep etching. The confinement originates from a local elongation of the cavity layer imprinted in a shallow etch and epitaxial overgrowth technique. We show that it is possible to improve the quality factor of such microcavities by a specific in-plane bullseye geometry consisting of a set of concentric rings with subwavelength dimensions. This design results in a smooth effective lateral photonic potential and therefore in a reduction of lateral scattering losses, which makes it highly appealing for experiments in the framework of exciton-polariton physics demanding tight spatial confinement.
Original languageEnglish
Article number052201
JournalPhysical Review Materials
Volume2
Issue number5
Number of pages5
ISSN2475-9953
DOIs
Publication statusPublished - 2018

Cite this

Winkler, K., Gregersen, N., Hayrynen, T., Bradel, B., Schade, A., Emmerling, M., ... Schneider, C. (2018). High quality factor GaAs microcavity with buried bullseye defects. Physical Review Materials, 2(5), [052201 ]. https://doi.org/10.1103/PhysRevMaterials.2.052201
Winkler, K. ; Gregersen, Niels ; Hayrynen, T. ; Bradel, B. ; Schade, A. ; Emmerling, M. ; Kamp, M. ; Höfling, S. ; Schneider, C. / High quality factor GaAs microcavity with buried bullseye defects. In: Physical Review Materials. 2018 ; Vol. 2, No. 5.
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Winkler, K, Gregersen, N, Hayrynen, T, Bradel, B, Schade, A, Emmerling, M, Kamp, M, Höfling, S & Schneider, C 2018, 'High quality factor GaAs microcavity with buried bullseye defects', Physical Review Materials, vol. 2, no. 5, 052201 . https://doi.org/10.1103/PhysRevMaterials.2.052201

High quality factor GaAs microcavity with buried bullseye defects. / Winkler, K.; Gregersen, Niels; Hayrynen, T.; Bradel, B.; Schade, A.; Emmerling, M.; Kamp, M.; Höfling, S.; Schneider, C.

In: Physical Review Materials, Vol. 2, No. 5, 052201 , 2018.

Research output: Contribution to journalJournal articleResearchpeer-review

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AU - Winkler, K.

AU - Gregersen, Niels

AU - Hayrynen, T.

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AU - Emmerling, M.

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AU - Schneider, C.

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AB - The development of high quality factor solid-state microcavities with low mode volumes has paved the way towards on-chip cavity quantum electrodynamics experiments and the development of high-performance nanophotonic devices. Here, we report on the implementation of a new kind of solid-state vertical microcavity, which allows for confinement of the electromagnetic field in the lateral direction without deep etching. The confinement originates from a local elongation of the cavity layer imprinted in a shallow etch and epitaxial overgrowth technique. We show that it is possible to improve the quality factor of such microcavities by a specific in-plane bullseye geometry consisting of a set of concentric rings with subwavelength dimensions. This design results in a smooth effective lateral photonic potential and therefore in a reduction of lateral scattering losses, which makes it highly appealing for experiments in the framework of exciton-polariton physics demanding tight spatial confinement.

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