High Q gallium nitride microring resonators

Erik Stassen; Minhao Pu; Elizaveta Semenova; E. Zavarin; W. Lundin; Kresten Yvind

doi:10.1109/CLEOE-EQEC.2017.8086619

High Q gallium nitride microring resonators

Erik Stassen
, Minhao Pu
, Elizaveta Semenova
, E. Zavarin
, W. Lundin
, Kresten Yvind

Centre of Excellence for Silicon Photonics for Optical Communications

RAS - Ioffe Physico Technical Institute

Research output: Chapter in Book/Report/Conference proceeding › Conference abstract in proceedings › Research › peer-review

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Abstract

Summary form only given. Gallium nitride (GaN) is a promising material for nonlinear microresonators. It has large intrinsic χ(2) and χ(3), excellent thermal properties and a relatively large bandgap [1] and can be used for example for parametric conversion and frequency doubling [2]. Furthermore it is quite resilient and can withstand high temperatures and power. In this paper, we demonstrate GaN microring resonators with a quality factor (Q) larger than 105, which, to the best of our knowledge, is the highest demonstrated Q for microring resonators in a pure GaN platform [3].

Original language	English
Title of host publication	2017 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC)
Number of pages	1
Publisher	IEEE
Publication date	2017
DOIs	https://doi.org/10.1109/CLEOE-EQEC.2017.8086619
Publication status	Published - 2017
Event	The 2017 European Conference on Lasers and Electro-Optics - Munich, Germany Duration: 25 Jun 2017 → 29 Jun 2017 http://www.cleoeurope.org/

Conference

Conference	The 2017 European Conference on Lasers and Electro-Optics
Country/Territory	Germany
City	Munich
Period	25/06/2017 → 29/06/2017
Internet address	http://www.cleoeurope.org/

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High Q Gallium Nitride Microring ResonatorsAccepted author manuscript, 176 KB

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title = "High Q gallium nitride microring resonators",

abstract = "Summary form only given. Gallium nitride (GaN) is a promising material for nonlinear microresonators. It has large intrinsic χ(2) and χ(3), excellent thermal properties and a relatively large bandgap [1] and can be used for example for parametric conversion and frequency doubling [2]. Furthermore it is quite resilient and can withstand high temperatures and power. In this paper, we demonstrate GaN microring resonators with a quality factor (Q) larger than 105, which, to the best of our knowledge, is the highest demonstrated Q for microring resonators in a pure GaN platform [3].",

author = "Erik Stassen and Minhao Pu and Elizaveta Semenova and E. Zavarin and W. Lundin and Kresten Yvind",

year = "2017",

doi = "10.1109/CLEOE-EQEC.2017.8086619",

language = "English",

booktitle = "2017 Conference on Lasers and Electro-Optics Europe \& European Quantum Electronics Conference (CLEO/Europe-EQEC)",

publisher = "IEEE",

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note = "The 2017 European Conference on Lasers and Electro-Optics, CLEO Europe 2017 ; Conference date: 25-06-2017 Through 29-06-2017",

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Stassen, E, Pu, M , Semenova, E, Zavarin, E, Lundin, W & Yvind, K 2017, High Q gallium nitride microring resonators. in 2017 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC). IEEE, The 2017 European Conference on Lasers and Electro-Optics, Munich, Bavaria, Germany, 25/06/2017. https://doi.org/10.1109/CLEOE-EQEC.2017.8086619

TY - ABST

T1 - High Q gallium nitride microring resonators

AU - Stassen, Erik

AU - Pu, Minhao

AU - Semenova, Elizaveta

AU - Zavarin, E.

AU - Lundin, W.

AU - Yvind, Kresten

PY - 2017

Y1 - 2017

N2 - Summary form only given. Gallium nitride (GaN) is a promising material for nonlinear microresonators. It has large intrinsic χ(2) and χ(3), excellent thermal properties and a relatively large bandgap [1] and can be used for example for parametric conversion and frequency doubling [2]. Furthermore it is quite resilient and can withstand high temperatures and power. In this paper, we demonstrate GaN microring resonators with a quality factor (Q) larger than 105, which, to the best of our knowledge, is the highest demonstrated Q for microring resonators in a pure GaN platform [3].

AB - Summary form only given. Gallium nitride (GaN) is a promising material for nonlinear microresonators. It has large intrinsic χ(2) and χ(3), excellent thermal properties and a relatively large bandgap [1] and can be used for example for parametric conversion and frequency doubling [2]. Furthermore it is quite resilient and can withstand high temperatures and power. In this paper, we demonstrate GaN microring resonators with a quality factor (Q) larger than 105, which, to the best of our knowledge, is the highest demonstrated Q for microring resonators in a pure GaN platform [3].

U2 - 10.1109/CLEOE-EQEC.2017.8086619

DO - 10.1109/CLEOE-EQEC.2017.8086619

M3 - Conference abstract in proceedings

BT - 2017 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC)

PB - IEEE

T2 - The 2017 European Conference on Lasers and Electro-Optics

Y2 - 25 June 2017 through 29 June 2017

ER -

High Q gallium nitride microring resonators

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