High Q gallium nitride microring resonators

Erik Stassen, Minhao Pu, Elizaveta Semenova, E. Zavarin, W. Lundin, Kresten Yvind

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Summary form only given. Gallium nitride (GaN) is a promising material for nonlinear microresonators. It has large intrinsic χ(2) and χ(3), excellent thermal properties and a relatively large bandgap [1] and can be used for example for parametric conversion and frequency doubling [2]. Furthermore it is quite resilient and can withstand high temperatures and power. In this paper, we demonstrate GaN microring resonators with a quality factor (Q) larger than 105, which, to the best of our knowledge, is the highest demonstrated Q for microring resonators in a pure GaN platform [3].
Original languageEnglish
Title of host publication2017 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC)
Number of pages1
Publication date2017
Publication statusPublished - 2017
EventThe 2017 European Conference on Lasers and Electro-Optics - Munich, Germany
Duration: 25 Jun 201729 Jun 2017


ConferenceThe 2017 European Conference on Lasers and Electro-Optics
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