High pressure sensor based on fusion bonding

Karen Birkelund, M Sørensen, S Chiriaev, P Gravesen, P. B. Rasmussen

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Abstract

In this paper we present a silicon based pressure sensor for high pressure applications. The sensor is based on fusion bonding and designed for a simple and a low-cost encapsulation scheme. The sensor can be designed for a maximum pressure in the range from 35 bar to 1500 bar and temperatures ranging from –40 °C to 120 °C and has a burst pressure exceeding 3000 bar. For proper performance of the sensor it is essential that the fusion bond inter-face is hermetic tight which will be one of the issues for discus-sion in this paper. Sensor design, fabrication and performance of the sensor will further be presented.
Original languageEnglish
Title of host publicationSemiconductor Wafer Bonding: Science, Technology, and Applications
Publication date2002
Pages275-286
ISBN (Print)1566773601
Publication statusPublished - 2002
Externally publishedYes
EventElectrochemical Society Proceedings -
Duration: 1 Jan 2002 → …

Conference

ConferenceElectrochemical Society Proceedings
Period01/01/2002 → …

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