High precision micro-scale Hall Effect characterization method using in-line micro four-point probes

Dirch Hjorth Petersen, Ole Hansen, Rong Lin, Peter Folmer Nielsen, T. Clarysse, J. Goossens, E. Rosseel, W. Vandervorst

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    Abstract

    Accurate characterization of ultra shallow junctions (USJ) is important in order to understand the principles of junction formation and to develop the appropriate implant and annealing technologies. We investigate the capabilities of a new micro-scale Hall effect measurement method where Hall effect is measured with collinear micro four-point probes (M4PP). We derive the sensitivity to electrode position errors and describe a position error suppression method to enable rapid reliable Hall effect measurements with just two measurement points. We show with both Monte Carlo simulations and experimental measurements, that the repeatability of a micro-scale Hall effect measurement is better than 1 %. We demonstrate the ability to spatially resolve Hall effect on micro-scale by characterization of an USJ with a single laser stripe anneal. The micro sheet resistance variations resulting from a spatially inhomogeneous anneal temperature are found to be directly correlated to the degree of dopant activation.
    Original languageEnglish
    Title of host publicationProceeding of "IEEE"
    PublisherIEEE
    Publication date2008
    Pages251-256
    ISBN (Print)978-1-4244-1950-0
    DOIs
    Publication statusPublished - 2008
    Event16th IEEE International Conference on Advanced Thermal Processing of Semiconductors - Las Vegas, NV, United States
    Duration: 30 Sep 20083 Oct 2008
    Conference number: 16
    http://ieeexplore.ieee.org/xpl/mostRecentIssue.jsp?punumber=4660005

    Conference

    Conference16th IEEE International Conference on Advanced Thermal Processing of Semiconductors
    Number16
    CountryUnited States
    CityLas Vegas, NV
    Period30/09/200803/10/2008
    Internet address

    Bibliographical note

    Copyright: 2008 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE

    Cite this

    Petersen, D. H., Hansen, O., Lin, R., Nielsen, P. F., Clarysse, T., Goossens, J., ... Vandervorst, W. (2008). High precision micro-scale Hall Effect characterization method using in-line micro four-point probes. In Proceeding of "IEEE" (pp. 251-256). IEEE. https://doi.org/10.1109/RTP.2008.4690563