High power terahertz induced carrier multiplication in Silicon

Abebe Tilahun Tarekegne; Pernille Klarskov Pedersen; Krzysztof Iwaszczuk; Peter Uhd Jepsen

doi:10.1109/IRMMW-THz.2015.7327401

High power terahertz induced carrier multiplication in Silicon

Abebe Tilahun Tarekegne
, Pernille Klarskov Pedersen
, Krzysztof Iwaszczuk
, Peter Uhd Jepsen

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

Abstract

The application of an intense THz field results a nonlinear transmission in high resistivity silicon. Upon increasing field strength, the transmission falls from 70% to 62% due to carrier generation through THz-induced impact ionization and subsequent absorption of the THz field by free electrons.

Original language	English
Title of host publication	Proceedings of 2015 40th International Conference on Infrared, Millimeter, and Terahertz waves
Number of pages	1
Publisher	IEEE
Publication date	2015
ISBN (Print)	9781479982721
DOIs	https://doi.org/10.1109/IRMMW-THz.2015.7327401
Publication status	Published - 2015
Event	40th International Conference on Infrared, Millimeter, and Terahertz Waves - Chinese University of Hong Kong, Hong Kong Duration: 23 Aug 2015 → 28 Aug 2015

Conference

Conference	40th International Conference on Infrared, Millimeter, and Terahertz Waves
Location	Chinese University of Hong Kong
Country/Territory	Hong Kong
Period	23/08/2015 → 28/08/2015

Keywords

Communication, Networking and Broadcast Technologies
Engineered Materials, Dielectrics and Plasmas
Fields, Waves and Electromagnetics
Photonics and Electrooptics
Absorption
Antenna arrays
Arrays
Conductivity
Impact ionization
Resonant frequency
Silicon

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10.1109/IRMMW-THz.2015.7327401

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title = "High power terahertz induced carrier multiplication in Silicon",

abstract = "The application of an intense THz field results a nonlinear transmission in high resistivity silicon. Upon increasing field strength, the transmission falls from 70\% to 62\% due to carrier generation through THz-induced impact ionization and subsequent absorption of the THz field by free electrons.",

keywords = "Communication, Networking and Broadcast Technologies, Engineered Materials, Dielectrics and Plasmas, Fields, Waves and Electromagnetics, Photonics and Electrooptics, Absorption, Antenna arrays, Arrays, Conductivity, Impact ionization, Resonant frequency, Silicon",

author = "Tarekegne, \{Abebe Tilahun\} and Pedersen, \{Pernille Klarskov\} and Krzysztof Iwaszczuk and Jepsen, \{Peter Uhd\}",

year = "2015",

doi = "10.1109/IRMMW-THz.2015.7327401",

language = "English",

isbn = "9781479982721",

booktitle = "Proceedings of 2015 40th International Conference on Infrared, Millimeter, and Terahertz waves",

publisher = "IEEE",

address = "United States",

note = "40th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2015 ; Conference date: 23-08-2015 Through 28-08-2015",

}

Tarekegne, AT, Pedersen, PK, Iwaszczuk, K & Jepsen, PU 2015, High power terahertz induced carrier multiplication in Silicon. in Proceedings of 2015 40th International Conference on Infrared, Millimeter, and Terahertz waves . IEEE, 40th International Conference on Infrared, Millimeter, and Terahertz Waves, Hong Kong, 23/08/2015. https://doi.org/10.1109/IRMMW-THz.2015.7327401

High power terahertz induced carrier multiplication in Silicon. / Tarekegne, Abebe Tilahun; Pedersen, Pernille Klarskov; Iwaszczuk, Krzysztof et al.
Proceedings of 2015 40th International Conference on Infrared, Millimeter, and Terahertz waves . IEEE, 2015.

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

TY - GEN

T1 - High power terahertz induced carrier multiplication in Silicon

AU - Tarekegne, Abebe Tilahun

AU - Pedersen, Pernille Klarskov

AU - Iwaszczuk, Krzysztof

AU - Jepsen, Peter Uhd

PY - 2015

Y1 - 2015

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AB - The application of an intense THz field results a nonlinear transmission in high resistivity silicon. Upon increasing field strength, the transmission falls from 70% to 62% due to carrier generation through THz-induced impact ionization and subsequent absorption of the THz field by free electrons.

KW - Communication, Networking and Broadcast Technologies

KW - Engineered Materials, Dielectrics and Plasmas

KW - Fields, Waves and Electromagnetics

KW - Photonics and Electrooptics

KW - Absorption

KW - Antenna arrays

KW - Arrays

KW - Conductivity

KW - Impact ionization

KW - Resonant frequency

KW - Silicon

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DO - 10.1109/IRMMW-THz.2015.7327401

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BT - Proceedings of 2015 40th International Conference on Infrared, Millimeter, and Terahertz waves

PB - IEEE

T2 - 40th International Conference on Infrared, Millimeter, and Terahertz Waves

Y2 - 23 August 2015 through 28 August 2015

ER -

High power terahertz induced carrier multiplication in Silicon

Abstract

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Keywords

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