High power terahertz induced carrier multiplication in Silicon

Abebe Tilahun Tarekegne, Pernille Klarskov Pedersen, Krzysztof Iwaszczuk, Peter Uhd Jepsen

Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review

Abstract

The application of an intense THz field results a nonlinear transmission in high resistivity silicon. Upon increasing field strength, the transmission falls from 70% to 62% due to carrier generation through THz-induced impact ionization and subsequent absorption of the THz field by free electrons.
Original languageEnglish
Title of host publicationProceedings of 2015 40th International Conference on Infrared, Millimeter, and Terahertz waves
Number of pages1
PublisherIEEE
Publication date2015
ISBN (Print)9781479982721
DOIs
Publication statusPublished - 2015
Event40th International Conference on Infrared, Millimeter, and Terahertz Waves - Chinese University of Hong Kong, Hong Kong
Duration: 23 Aug 201528 Aug 2015

Conference

Conference40th International Conference on Infrared, Millimeter, and Terahertz Waves
LocationChinese University of Hong Kong
Country/TerritoryHong Kong
Period23/08/201528/08/2015

Keywords

  • Communication, Networking and Broadcast Technologies
  • Engineered Materials, Dielectrics and Plasmas
  • Fields, Waves and Electromagnetics
  • Photonics and Electrooptics
  • Absorption
  • Antenna arrays
  • Arrays
  • Conductivity
  • Impact ionization
  • Resonant frequency
  • Silicon

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