High power density for class-d audio power amplifiers, equipped with eGaNFETs

Andreas S. Petersen*, Niels E. Iversen, Michael A.E. Andersen

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review

Abstract

This paper presents how to optimize the power density of Class-D audio power amplifiers. The main task is to ensure that the ratio between the ripple current and the continuous output current is larger than one. When this is satisfied soft switching conditions are facilitated. Optimizing the amplifier power stage for soft switching while playing audio result in a more evenly distribution of the power dissipation between switching devices and filter inductors. Measured results on 150 Wrms test amplifiers equipped with eGaNFETs shows that the power density can reach 14.3 W/cm 3 , with THDN levels as low as 0.03 %. Moreover safe operating temperatures below 100 °C when playing music with peaking powers of 200 W is achieved. Compared to state-of-the art, the power density of the amplifier module is improved with a factor 2-3.

Original languageEnglish
Title of host publicationProceedings of 145th Audio Engineering Society International Convention
PublisherAudio Engineering Society
Publication date1 Jan 2018
Publication statusPublished - 1 Jan 2018
Event145th Audio Engineering Society International Convention - New York, United States
Duration: 17 Oct 201820 Oct 2018
Conference number: 145

Conference

Conference145th Audio Engineering Society International Convention
Number145
CountryUnited States
CityNew York
Period17/10/201820/10/2018

Cite this

Petersen, A. S., Iversen, N. E., & Andersen, M. A. E. (2018). High power density for class-d audio power amplifiers, equipped with eGaNFETs. In Proceedings of 145th Audio Engineering Society International Convention Audio Engineering Society.