High-Power 1180-nm GaInNAs DBR Laser Diodes

Antti T. Aho, Jukka Viheriala, Ville-Markus Korpijarvi, Mervi Koskinen, Heikki Virtanen, Mathias Christensen, Topi Uusitalo, Kimmo Lahtonen, Mika Valden, Mircea Guina

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Abstract

We report high-power 1180-nm GaInNAs distributed Bragg reflector laser diodes with and without a tapered amplifying section. The untapered and tapered components reached room temperature output powers of 655 mW and 4.04 W, respectively. The diodes exhibited narrow linewidth emission with side-mode suppression ratios in the range of 50 dB for a broad range of operating current, extending up to 2 A for the untapered component and 10 A for the tapered component. The high output power is rendered possible by the use of a high quality GaInNAs-based quantum well gain region, which allows for lower strain and better carrier confinement compared with traditional GaInAs quantum wells. The development opens new opportunities for the power scaling of frequency-doubled lasers with emission at yellow-orange wavelengths.
Original languageEnglish
JournalI E E E Photonics Technology Letters
Volume29
Issue number23
Pages (from-to)2023-2026
Number of pages4
ISSN1041-1135
DOIs
Publication statusPublished - 2017

Keywords

  • High power
  • Distributed Bragg reflector lasers
  • Frequency doubling
  • Antireflection coatings

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