High-Power 1180-nm GaInNAs DBR Laser Diodes

Antti T. Aho; Jukka Viheriala; Ville-Markus Korpijarvi; Mervi Koskinen; Heikki Virtanen; Mathias Christensen; Topi Uusitalo; Kimmo Lahtonen; Mika Valden; Mircea Guina

doi:10.1109/LPT.2017.2760038

High-Power 1180-nm GaInNAs DBR Laser Diodes

Antti T. Aho, Jukka Viheriala, Ville-Markus Korpijarvi, Mervi Koskinen, Heikki Virtanen, Mathias Christensen, Topi Uusitalo, Kimmo Lahtonen, Mika Valden, Mircea Guina

Tampere University of Technology

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Abstract

We report high-power 1180-nm GaInNAs distributed Bragg reflector laser diodes with and without a tapered amplifying section. The untapered and tapered components reached room temperature output powers of 655 mW and 4.04 W, respectively. The diodes exhibited narrow linewidth emission with side-mode suppression ratios in the range of 50 dB for a broad range of operating current, extending up to 2 A for the untapered component and 10 A for the tapered component. The high output power is rendered possible by the use of a high quality GaInNAs-based quantum well gain region, which allows for lower strain and better carrier confinement compared with traditional GaInAs quantum wells. The development opens new opportunities for the power scaling of frequency-doubled lasers with emission at yellow-orange wavelengths.

Original language	English
Journal	I E E E Photonics Technology Letters
Volume	29
Issue number	23
Pages (from-to)	2023-2026
Number of pages	4
ISSN	1041-1135
DOIs	https://doi.org/10.1109/LPT.2017.2760038
Publication status	Published - 2017

Keywords

High power
Distributed Bragg reflector lasers
Frequency doubling
Antireflection coatings

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10.1109/LPT.2017.2760038

08060506Final published version, 2.77 MBLicence: CC BY

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title = "High-Power 1180-nm GaInNAs DBR Laser Diodes",

abstract = "We report high-power 1180-nm GaInNAs distributed Bragg reflector laser diodes with and without a tapered amplifying section. The untapered and tapered components reached room temperature output powers of 655 mW and 4.04 W, respectively. The diodes exhibited narrow linewidth emission with side-mode suppression ratios in the range of 50 dB for a broad range of operating current, extending up to 2 A for the untapered component and 10 A for the tapered component. The high output power is rendered possible by the use of a high quality GaInNAs-based quantum well gain region, which allows for lower strain and better carrier confinement compared with traditional GaInAs quantum wells. The development opens new opportunities for the power scaling of frequency-doubled lasers with emission at yellow-orange wavelengths.",

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doi = "10.1109/LPT.2017.2760038",

language = "English",

volume = "29",

pages = "2023--2026",

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T1 - High-Power 1180-nm GaInNAs DBR Laser Diodes

AU - Aho, Antti T.

AU - Viheriala, Jukka

AU - Korpijarvi, Ville-Markus

AU - Koskinen, Mervi

AU - Virtanen, Heikki

AU - Christensen, Mathias

AU - Uusitalo, Topi

AU - Lahtonen, Kimmo

AU - Valden, Mika

AU - Guina, Mircea

PY - 2017

Y1 - 2017

N2 - We report high-power 1180-nm GaInNAs distributed Bragg reflector laser diodes with and without a tapered amplifying section. The untapered and tapered components reached room temperature output powers of 655 mW and 4.04 W, respectively. The diodes exhibited narrow linewidth emission with side-mode suppression ratios in the range of 50 dB for a broad range of operating current, extending up to 2 A for the untapered component and 10 A for the tapered component. The high output power is rendered possible by the use of a high quality GaInNAs-based quantum well gain region, which allows for lower strain and better carrier confinement compared with traditional GaInAs quantum wells. The development opens new opportunities for the power scaling of frequency-doubled lasers with emission at yellow-orange wavelengths.

AB - We report high-power 1180-nm GaInNAs distributed Bragg reflector laser diodes with and without a tapered amplifying section. The untapered and tapered components reached room temperature output powers of 655 mW and 4.04 W, respectively. The diodes exhibited narrow linewidth emission with side-mode suppression ratios in the range of 50 dB for a broad range of operating current, extending up to 2 A for the untapered component and 10 A for the tapered component. The high output power is rendered possible by the use of a high quality GaInNAs-based quantum well gain region, which allows for lower strain and better carrier confinement compared with traditional GaInAs quantum wells. The development opens new opportunities for the power scaling of frequency-doubled lasers with emission at yellow-orange wavelengths.

KW - High power

KW - Distributed Bragg reflector lasers

KW - Frequency doubling

KW - Antireflection coatings

U2 - 10.1109/LPT.2017.2760038

DO - 10.1109/LPT.2017.2760038

M3 - Journal article

SN - 1041-1135

VL - 29

SP - 2023

EP - 2026

JO - I E E E Photonics Technology Letters

JF - I E E E Photonics Technology Letters

IS - 23

ER -

High-Power 1180-nm GaInNAs DBR Laser Diodes

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