High-Performance Single Nanowire Tunnel Diodes

Jesper Wallentin; Johan Mikael Persson; Jakob Birkedal Wagner; Lars Samuelson; Knut Deppert; Magnus Borgström

doi:10.1021/nl903941b

High-Performance Single Nanowire Tunnel Diodes

Jesper Wallentin, Johan Mikael Persson, Jakob Birkedal Wagner, Lars Samuelson, Knut Deppert, Magnus Borgström

Lund University

Research output: Contribution to journal › Journal article › Research › peer-review

Abstract

We demonstrate single nanowire tunnel diodes with room temperature peak current densities of up to 329 A/cm(2). Despite the large surface to volume ratio of the type-II InP-GaAs axial heterostructure nanowires, we measure peak to valley current ratios (PVCR) of up to 8.2 at room temperature and 27.6 at liquid helium temperature. These sub-100-nm-diameter structures are promising components for solar cells as well as electronic applications.

Original language	English
Journal	Nano Letters
Volume	10
Issue number	3
Pages (from-to)	974-979
ISSN	1530-6984
DOIs	https://doi.org/10.1021/nl903941b
Publication status	Published - 2010

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@article{6a860193a7144178b5c2fc5f3bdd1e27,

title = "High-Performance Single Nanowire Tunnel Diodes",

abstract = "We demonstrate single nanowire tunnel diodes with room temperature peak current densities of up to 329 A/cm(2). Despite the large surface to volume ratio of the type-II InP-GaAs axial heterostructure nanowires, we measure peak to valley current ratios (PVCR) of up to 8.2 at room temperature and 27.6 at liquid helium temperature. These sub-100-nm-diameter structures are promising components for solar cells as well as electronic applications.",

author = "Jesper Wallentin and Persson, {Johan Mikael} and Wagner, {Jakob Birkedal} and Lars Samuelson and Knut Deppert and Magnus Borgstr{\"o}m",

year = "2010",

doi = "10.1021/nl903941b",

language = "English",

volume = "10",

pages = "974--979",

journal = "Nano Letters",

issn = "1530-6984",

publisher = "American Chemical Society",

number = "3",

}

TY - JOUR

T1 - High-Performance Single Nanowire Tunnel Diodes

AU - Wallentin, Jesper

AU - Persson, Johan Mikael

AU - Wagner, Jakob Birkedal

AU - Samuelson, Lars

AU - Deppert, Knut

AU - Borgström, Magnus

PY - 2010

Y1 - 2010

N2 - We demonstrate single nanowire tunnel diodes with room temperature peak current densities of up to 329 A/cm(2). Despite the large surface to volume ratio of the type-II InP-GaAs axial heterostructure nanowires, we measure peak to valley current ratios (PVCR) of up to 8.2 at room temperature and 27.6 at liquid helium temperature. These sub-100-nm-diameter structures are promising components for solar cells as well as electronic applications.

AB - We demonstrate single nanowire tunnel diodes with room temperature peak current densities of up to 329 A/cm(2). Despite the large surface to volume ratio of the type-II InP-GaAs axial heterostructure nanowires, we measure peak to valley current ratios (PVCR) of up to 8.2 at room temperature and 27.6 at liquid helium temperature. These sub-100-nm-diameter structures are promising components for solar cells as well as electronic applications.

U2 - 10.1021/nl903941b

DO - 10.1021/nl903941b

M3 - Journal article

C2 - 20163125

SN - 1530-6984

VL - 10

SP - 974

EP - 979

JO - Nano Letters

JF - Nano Letters

IS - 3

ER -

High-Performance Single Nanowire Tunnel Diodes

Abstract

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