HIGH PERFORMANCE CERIA BASED OXYGEN MEMBRANE

Christodoulos Chatzichristodoulou; Peter Vang Hendriksen; Søren Preben Vagn Foghmoes; Sandrine Ricote; Andreas Kaiser; Julie Classcock; Shiyang Cheng

HIGH PERFORMANCE CERIA BASED OXYGEN MEMBRANE

Christodoulos Chatzichristodoulou (Inventor), Peter Vang Hendriksen (Inventor), Søren Preben Vagn Foghmoes (Inventor), Sandrine Ricote (Inventor), Andreas Kaiser (Inventor), Julie Classcock (Inventor), Shiyang Cheng (Inventor)

Department of Energy Conversion and Storage

Research output: Patent

Abstract

The invention describes a new class of highly stable mixed conducting materials based on acceptor doped cerium oxide (CeO2-8 ) in which the limiting electronic conductivity is significantly enhanced by co-doping with a second element or co- dopant, such as Nb, W and Zn, so that cerium and the co-dopant have an ionic size ratio between 0.5 and 1. These materials can thereby improve the performance and extend the range of operating conditions of oxygen permeation membranes (OPM) for different high temperature membrane reactor applications. The invention also relates to the manufacturing of supported thin film membrane devices using these materials.

Original language	English
IPC	B01D71/00
Patent number	WO2014059992
Filing date	24/04/2014
Country	International Bureau of the World Intellectual Property Organization (WIPO)
Priority date	19/10/2012
Priority number	EP20120189205
Publication status	Published - 2014

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title = "HIGH PERFORMANCE CERIA BASED OXYGEN MEMBRANE",

abstract = "The invention describes a new class of highly stable mixed conducting materials based on acceptor doped cerium oxide (CeO2-8 ) in which the limiting electronic conductivity is significantly enhanced by co-doping with a second element or co- dopant, such as Nb, W and Zn, so that cerium and the co-dopant have an ionic size ratio between 0.5 and 1. These materials can thereby improve the performance and extend the range of operating conditions of oxygen permeation membranes (OPM) for different high temperature membrane reactor applications. The invention also relates to the manufacturing of supported thin film membrane devices using these materials.",

author = "Christodoulos Chatzichristodoulou and Hendriksen, {Peter Vang} and Foghmoes, {S{\o}ren Preben Vagn} and Sandrine Ricote and Andreas Kaiser and Julie Classcock and Shiyang Cheng",

year = "2014",

language = "English",

type = "Patent",

note = "WO2014059992; B01D71/00",

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TY - PAT

T1 - HIGH PERFORMANCE CERIA BASED OXYGEN MEMBRANE

AU - Chatzichristodoulou, Christodoulos

AU - Hendriksen, Peter Vang

AU - Foghmoes, Søren Preben Vagn

AU - Ricote, Sandrine

AU - Kaiser, Andreas

AU - Classcock, Julie

AU - Cheng, Shiyang

PY - 2014

Y1 - 2014

N2 - The invention describes a new class of highly stable mixed conducting materials based on acceptor doped cerium oxide (CeO2-8 ) in which the limiting electronic conductivity is significantly enhanced by co-doping with a second element or co- dopant, such as Nb, W and Zn, so that cerium and the co-dopant have an ionic size ratio between 0.5 and 1. These materials can thereby improve the performance and extend the range of operating conditions of oxygen permeation membranes (OPM) for different high temperature membrane reactor applications. The invention also relates to the manufacturing of supported thin film membrane devices using these materials.

AB - The invention describes a new class of highly stable mixed conducting materials based on acceptor doped cerium oxide (CeO2-8 ) in which the limiting electronic conductivity is significantly enhanced by co-doping with a second element or co- dopant, such as Nb, W and Zn, so that cerium and the co-dopant have an ionic size ratio between 0.5 and 1. These materials can thereby improve the performance and extend the range of operating conditions of oxygen permeation membranes (OPM) for different high temperature membrane reactor applications. The invention also relates to the manufacturing of supported thin film membrane devices using these materials.

M3 - Patent

M1 - WO2014059992

Y2 - 2014/04/24

ER -