High-performance 10 GHz all-active monolithic mode-locked semiconductor lasers

Kresten Yvind; David Larsson; Lotte Jin Christiansen; Jesper Mørk; Jørn Märcher Hvam; Jesper Hanberg

High-performance 10 GHz all-active monolithic mode-locked semiconductor lasers

Kresten Yvind, David Larsson, Lotte Jin Christiansen, Jesper Mørk, Jørn Märcher Hvam, Jesper Hanberg

Department of Photonics Engineering

Research output: Contribution to journal › Journal article › Research › peer-review

Abstract

Using a novel design strategy for the epitaxial structure for monolithic modelocked semiconductor lasers, lasers capable of producing <2 ps pulses at 10 GHz with very low high-frequency jitter have been fabricated in a single growth step.

Original language	English
Journal	Electronics Letters
Volume	40
Issue number	12
Pages (from-to)	735-736
ISSN	0013-5194
Publication status	Published - 2004

Cite this

@article{1435a68dec4e453cbe427160042d4a41,

title = "High-performance 10 GHz all-active monolithic mode-locked semiconductor lasers",

abstract = "Using a novel design strategy for the epitaxial structure for monolithic modelocked semiconductor lasers, lasers capable of producing <2 ps pulses at 10 GHz with very low high-frequency jitter have been fabricated in a single growth step.",

author = "Kresten Yvind and David Larsson and Christiansen, {Lotte Jin} and Jesper M{\o}rk and Hvam, {J{\o}rn M{\"a}rcher} and Jesper Hanberg",

year = "2004",

language = "English",

volume = "40",

pages = "735--736",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "The/Institution of Engineering and Technology",

number = "12",

}

TY - JOUR

T1 - High-performance 10 GHz all-active monolithic mode-locked semiconductor lasers

AU - Yvind, Kresten

AU - Larsson, David

AU - Christiansen, Lotte Jin

AU - Mørk, Jesper

AU - Hvam, Jørn Märcher

AU - Hanberg, Jesper

PY - 2004

Y1 - 2004

N2 - Using a novel design strategy for the epitaxial structure for monolithic modelocked semiconductor lasers, lasers capable of producing <2 ps pulses at 10 GHz with very low high-frequency jitter have been fabricated in a single growth step.

AB - Using a novel design strategy for the epitaxial structure for monolithic modelocked semiconductor lasers, lasers capable of producing <2 ps pulses at 10 GHz with very low high-frequency jitter have been fabricated in a single growth step.

M3 - Journal article

VL - 40

SP - 735

EP - 736

JO - Electronics Letters

JF - Electronics Letters

SN - 0013-5194

IS - 12

ER -

High-performance 10 GHz all-active monolithic mode-locked semiconductor lasers

Abstract

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