Abstract
Using a novel design strategy for the epitaxial structure for monolithic modelocked semiconductor lasers, lasers capable of producing <2 ps pulses at 10 GHz with very low high-frequency jitter have been fabricated in a single growth step.
Original language | English |
---|---|
Journal | Electronics Letters |
Volume | 40 |
Issue number | 12 |
Pages (from-to) | 735-736 |
ISSN | 0013-5194 |
Publication status | Published - 2004 |