High output power ultra-wideband distributed amplifier in InP DHBT technology using diamond heat spreader

Tanjil Shivan, Maruf Hossain, Ralf Doerner, Tom Keinicke Johansen, Ksenia Nosaeva, Hady Yacoub, Wolfgang Heinrich, Viktor Krozer

Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review

Abstract

This work reports on a highly linear and high output power ultra-wideband distributed amplifier with improved thermal properties using a diamond layer for heat spreading. The performances of a circuit with and without the diamond heat spreader are compared. Adding the diamond yields a 4 dB improvement in 1 dB compression point (P1dB) and saturated output power (Psat). Intermodulation distortion has also been measured and the amplifier achieves 24 dBm OIP3 over a bandwidth larger than 60 GHz. In terms of small-signal characteristics, the circuit shows 12 dB gain and low deviation from linear phase, similarly to the non-diamond version. This amplifier demonstrates highest P1dB, OIP3, and PAE values as compared to other technologies with similar or higher bandwidth.
Original languageEnglish
Title of host publicationProceedings of 2020 IEEE/MTT-S International Microwave Symposium
Number of pages4
PublisherIEEE
Publication date2020
Article number9223893
ISBN (Print)9781728168159
DOIs
Publication statusPublished - 2020
Event2020 IEEE/MTT-S International Microwave Symposium - Los Angeles, United States
Duration: 21 Jun 202026 Jun 2020

Conference

Conference2020 IEEE/MTT-S International Microwave Symposium
CountryUnited States
CityLos Angeles
Period21/06/202026/06/2020
SeriesI E E E - M T T S International Microwave Symposium. Digest
ISSN0149-645X

Keywords

  • Distributed amplifier
  • InP double heterojunction bipolar transistor (DHBT)
  • Monolithic microwave integrated circuit (MMIC)
  • Travelling wave amplifier

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