High-mobility two-dimensional electron gases at oxide interfaces: Origins and opportunities.

Yunzhong Chen (Invited author), Nini Pryds (Invited author), Ji-Rong Sun (Invited author), Bao-Gen Shen (Invited author), Søren Linderoth (Invited author)

Research output: Contribution to journalJournal articleResearchpeer-review


Our recent experimental work on metallic and insulating interfaces controlled by interfacial redox reactions in SrTiO3-based heterostructures is reviewed along with a more general background of two-dimensional electron gas (2DEG) at oxide interfaces. Due to the presence of oxygen vacancies at the SrTiO3 surface, metallic conduction can be created at room temperature in perovskite-type interfaces when the overlayer oxide ABO3 has Al, Ti, Zr, or Hf elements at the B sites. Furthermore, relying on interface-stabilized oxygen vacancies, we have created a new type of 2DEG at the heterointerface between SrTiO3 and a spinel g-Al2O3 epitaxial film with compatible oxygen ion sublattices. This 2DEG exhibits an electron mobility exceeding 100000 cm2·V-1·s-1, more than one order of magnitude higher than that of hitherto investigated perovskite-type interfaces. Our findings pave a way for the design of high-mobility all-oxide electronic devices and open a route toward the studies of mesoscopic physics with complex oxides.

Original languageEnglish
Article number116803
JournalChinese Physics B
Issue number11
Number of pages11
Publication statusPublished - 2013

Bibliographical note

Invited topical review.


  • Oxide interfaces
  • Two-dimensional electron gas (2DEG)
  • SrTiO3
  • Oxygen vacancies


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