High-index-contrast subwavelength grating VCSEL

Philippe Gilet, Nicolas Olivier, Philippe Grosse, Karen Gilbert, Alexei Chelnokov, Il-Sug Chung, Jesper Mørk

    Research output: Contribution to journalConference articleResearchpeer-review

    Abstract

    In this article, we report our results on 980nm high-index-contrast subwavelength grating (HCG) VCSELs for optical interconnection applications. In our structure, a thin undoped HCG layer replaces a thick p-type Bragg mirror. The HCG mirror can feasibly achieve polarization-selective reflectivities close to 100%. The investigated structure consists of a HCG mirror with an underneath /4-thick oxide gap, four p-type GaAlAs/GaAs pairs for current spreading, three InGaAs/GaAs quantum wells, and an n-type GaAlAs/GaAs Bragg mirror. The HCG structure was defined by e-beam lithography and dry etching. The current oxide aperture and the oxide gap underneath the HCG were simultaneously formed by the selective wet oxidation process. Compared to air-gap high contrast grating mirrors demonstrated elsewhere, our grating mirrors are particular since they are supported by thinner /4 aluminium oxide layer, and thus are mechanically robust and thinner than usual designs. Sub-milliamp threshold currents and single-transverse-mode operation was obtained. A hero device exhibited maximum singlemode output power of more than 4 mW at room temperature and 1 mw at 70°C, which are the highest values ever reported from the HCG structures. These results build a bridge between a standard VCSEL and a hybrid laser on silicon, making them of potential use for the realization of silicon photonics.
    Original languageEnglish
    JournalProceedings of SPIE - The International Society for Optical Engineering
    Volume7615
    Pages (from-to)76150J
    ISSN0277-786X
    DOIs
    Publication statusPublished - 2010
    EventVertical-Cavity Surface-Emitting Lasers XIV: Photonics West: Integrated Optoelectronic Devices - San Francisco, United States
    Duration: 23 Jan 201028 Jan 2010

    Conference

    ConferenceVertical-Cavity Surface-Emitting Lasers XIV
    Country/TerritoryUnited States
    CitySan Francisco
    Period23/01/201028/01/2010

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