High impact ionization rate in silicon by sub-picosecond THz electric field pulses (Conference Presentation)

Abebe Tilahun Tarekegne, Krzysztof Iwaszczuk, Hideki Hirori, Koichiro Tanaka, Peter Uhd Jepsen

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Abstract

Summary form only given. Metallic antenna arrays fabricated on high resistivity silicon are used to localize and enhance the incident THz field resulting in high electric field pulses with peak electric field strength reaching several MV/cm on the silicon surface near the antenna tips. In such high electric field strengths high density of carriers are generated in silicon through impact ionization process. The high density of generated carriers induces a change of refractive index in silicon. By measuring the change of reflectivity of tightly focused 800 nm light, the local density of free carriers near the antenna tips is measured. Using the NIR probing technique, we observed that the density of carriers increases by over 8 orders of magnitude in a time duration of approximately 500 fs with an incident THz pulse of peak electric field strength 700 kV/cm. This shows that a single impact ionization process is happening in a time duration of less than 20 fs. The measurement is repeated by exciting the sample with an optical pump beam at a wavelength of 400 nm. The optical pump sets the initial free carrier density before the THz-induced impact ionization. The measurements show that the carrier generation mechanism depends on the initial free carrier density which confirms that the carrier generation mechanism is impact ionization, rather than the alternative carrier generation mechanism in high electric field, i.e. Zener tunneling. Finally this technique can be extended to investigate carrier dynamics in other semiconductors.
Original languageEnglish
Title of host publicationProceedings of SPIE
Volume10102
PublisherSPIE - International Society for Optical Engineering
Publication date2017
Article number101020Z
DOIs
Publication statusPublished - 2017
EventUltrafast Phenomena and Nanophotonics XXI - San Francisco, United States
Duration: 30 Jan 20172 Feb 2017

Conference

ConferenceUltrafast Phenomena and Nanophotonics XXI
CountryUnited States
CitySan Francisco
Period30/01/201702/02/2017
SeriesProceedings of S P I E - International Society for Optical Engineering
ISSN0277-786X

Bibliographical note

Copyright 2017 Society of Photo Optical Instrumentation Engineers. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.

Cite this

Tarekegne, A. T., Iwaszczuk, K., Hirori, H., Tanaka, K., & Jepsen, P. U. (2017). High impact ionization rate in silicon by sub-picosecond THz electric field pulses (Conference Presentation). In Proceedings of SPIE (Vol. 10102). [101020Z] SPIE - International Society for Optical Engineering. Proceedings of S P I E - International Society for Optical Engineering https://doi.org/10.1117/12.2252058
Tarekegne, Abebe Tilahun ; Iwaszczuk, Krzysztof ; Hirori, Hideki ; Tanaka, Koichiro ; Jepsen, Peter Uhd. / High impact ionization rate in silicon by sub-picosecond THz electric field pulses (Conference Presentation). Proceedings of SPIE. Vol. 10102 SPIE - International Society for Optical Engineering, 2017. (Proceedings of S P I E - International Society for Optical Engineering).
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abstract = "Summary form only given. Metallic antenna arrays fabricated on high resistivity silicon are used to localize and enhance the incident THz field resulting in high electric field pulses with peak electric field strength reaching several MV/cm on the silicon surface near the antenna tips. In such high electric field strengths high density of carriers are generated in silicon through impact ionization process. The high density of generated carriers induces a change of refractive index in silicon. By measuring the change of reflectivity of tightly focused 800 nm light, the local density of free carriers near the antenna tips is measured. Using the NIR probing technique, we observed that the density of carriers increases by over 8 orders of magnitude in a time duration of approximately 500 fs with an incident THz pulse of peak electric field strength 700 kV/cm. This shows that a single impact ionization process is happening in a time duration of less than 20 fs. The measurement is repeated by exciting the sample with an optical pump beam at a wavelength of 400 nm. The optical pump sets the initial free carrier density before the THz-induced impact ionization. The measurements show that the carrier generation mechanism depends on the initial free carrier density which confirms that the carrier generation mechanism is impact ionization, rather than the alternative carrier generation mechanism in high electric field, i.e. Zener tunneling. Finally this technique can be extended to investigate carrier dynamics in other semiconductors.",
author = "Tarekegne, {Abebe Tilahun} and Krzysztof Iwaszczuk and Hideki Hirori and Koichiro Tanaka and Jepsen, {Peter Uhd}",
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Tarekegne, AT, Iwaszczuk, K, Hirori, H, Tanaka, K & Jepsen, PU 2017, High impact ionization rate in silicon by sub-picosecond THz electric field pulses (Conference Presentation). in Proceedings of SPIE. vol. 10102, 101020Z, SPIE - International Society for Optical Engineering, Proceedings of S P I E - International Society for Optical Engineering, Ultrafast Phenomena and Nanophotonics XXI, San Francisco, United States, 30/01/2017. https://doi.org/10.1117/12.2252058

High impact ionization rate in silicon by sub-picosecond THz electric field pulses (Conference Presentation). / Tarekegne, Abebe Tilahun; Iwaszczuk, Krzysztof; Hirori, Hideki; Tanaka, Koichiro; Jepsen, Peter Uhd.

Proceedings of SPIE. Vol. 10102 SPIE - International Society for Optical Engineering, 2017. 101020Z (Proceedings of S P I E - International Society for Optical Engineering).

Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review

TY - GEN

T1 - High impact ionization rate in silicon by sub-picosecond THz electric field pulses (Conference Presentation)

AU - Tarekegne, Abebe Tilahun

AU - Iwaszczuk, Krzysztof

AU - Hirori, Hideki

AU - Tanaka, Koichiro

AU - Jepsen, Peter Uhd

N1 - Copyright 2017 Society of Photo Optical Instrumentation Engineers. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.

PY - 2017

Y1 - 2017

N2 - Summary form only given. Metallic antenna arrays fabricated on high resistivity silicon are used to localize and enhance the incident THz field resulting in high electric field pulses with peak electric field strength reaching several MV/cm on the silicon surface near the antenna tips. In such high electric field strengths high density of carriers are generated in silicon through impact ionization process. The high density of generated carriers induces a change of refractive index in silicon. By measuring the change of reflectivity of tightly focused 800 nm light, the local density of free carriers near the antenna tips is measured. Using the NIR probing technique, we observed that the density of carriers increases by over 8 orders of magnitude in a time duration of approximately 500 fs with an incident THz pulse of peak electric field strength 700 kV/cm. This shows that a single impact ionization process is happening in a time duration of less than 20 fs. The measurement is repeated by exciting the sample with an optical pump beam at a wavelength of 400 nm. The optical pump sets the initial free carrier density before the THz-induced impact ionization. The measurements show that the carrier generation mechanism depends on the initial free carrier density which confirms that the carrier generation mechanism is impact ionization, rather than the alternative carrier generation mechanism in high electric field, i.e. Zener tunneling. Finally this technique can be extended to investigate carrier dynamics in other semiconductors.

AB - Summary form only given. Metallic antenna arrays fabricated on high resistivity silicon are used to localize and enhance the incident THz field resulting in high electric field pulses with peak electric field strength reaching several MV/cm on the silicon surface near the antenna tips. In such high electric field strengths high density of carriers are generated in silicon through impact ionization process. The high density of generated carriers induces a change of refractive index in silicon. By measuring the change of reflectivity of tightly focused 800 nm light, the local density of free carriers near the antenna tips is measured. Using the NIR probing technique, we observed that the density of carriers increases by over 8 orders of magnitude in a time duration of approximately 500 fs with an incident THz pulse of peak electric field strength 700 kV/cm. This shows that a single impact ionization process is happening in a time duration of less than 20 fs. The measurement is repeated by exciting the sample with an optical pump beam at a wavelength of 400 nm. The optical pump sets the initial free carrier density before the THz-induced impact ionization. The measurements show that the carrier generation mechanism depends on the initial free carrier density which confirms that the carrier generation mechanism is impact ionization, rather than the alternative carrier generation mechanism in high electric field, i.e. Zener tunneling. Finally this technique can be extended to investigate carrier dynamics in other semiconductors.

U2 - 10.1117/12.2252058

DO - 10.1117/12.2252058

M3 - Article in proceedings

VL - 10102

BT - Proceedings of SPIE

PB - SPIE - International Society for Optical Engineering

ER -

Tarekegne AT, Iwaszczuk K, Hirori H, Tanaka K, Jepsen PU. High impact ionization rate in silicon by sub-picosecond THz electric field pulses (Conference Presentation). In Proceedings of SPIE. Vol. 10102. SPIE - International Society for Optical Engineering. 2017. 101020Z. (Proceedings of S P I E - International Society for Optical Engineering). https://doi.org/10.1117/12.2252058