High-field EPR spectroscopy of thermal donors in silicon

R. Dirksen, F.B. Rasmussen, T. Gregorkiewicz, C.A.J. Ammerlaan

    Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review

    Abstract

    Thermal donors generated in p-type boron-doped Czochralski-grown silicon by a 450 degrees C heat treatment have been studied by high-field magnetic resonance spectroscopy. In the experiments conducted at a microwave frequency of 140 GHz and in a magnetic field of approximately 5 T four individual thermal donors species could be resolved. These were observed in their singly ionized TD+ charge state. For the first time in the four decades of thermal donor research the g tensor values for specific members of the Si-NL8 family are given. Also the symmetry of the observed species is discussed.
    Original languageEnglish
    Title of host publicationDefects in Semiconductors - ICDS-19
    Volumepart 1-3
    Publication date1997
    Pages373-378
    ISBN (Print)0-87849-786-2
    DOIs
    Publication statusPublished - 1997
    Event19th International conference on defects in semiconductors (ICDS-19) - Aveiro, Portugal
    Duration: 1 Jul 1997 → …
    Conference number: 19

    Conference

    Conference19th International conference on defects in semiconductors (ICDS-19)
    Number19
    CountryPortugal
    CityAveiro
    Period01/07/1997 → …
    SeriesMaterials Science Forum
    Volume 258-263
    ISSN0255-5476

    Keywords

    • magnetic resonance
    • silicon
    • thermal donors

    Cite this