High Efficiency Wavelength Conversion of 40 Gbps Signals at 1550 nm in SOI Nano-Rib Waveguides Using p-i-n Diodes

Andrzej Gajda; Francesco Da Ros; Dragana Vukovic; L. Zimmermann; Christophe Peucheret; B. Tillack; K. Peterman

doi:10.1109/Group4.2013.6644420

High Efficiency Wavelength Conversion of 40 Gbps Signals at 1550 nm in SOI Nano-Rib Waveguides Using p-i-n Diodes

Andrzej Gajda, Francesco Da Ros, Dragana Vukovic, L. Zimmermann, Christophe Peucheret, B. Tillack, K. Peterman

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

Abstract

We demonstrate enhancement of FWM wavelength conversion of a 40 Gbps signal in a reverse-biased p-i-n junction silicon waveguide. A conversion efficiency of −4.6 dB enables a conversion power penalty as low as 0.2 dB.

Original language	English
Title of host publication	2013 IEEE 10th International Conference on Group IV Photonics (GFP)
Publisher	IEEE
Publication date	2013
Pages	160-161
ISBN (Print)	978-1-4673-5803-3
DOIs	https://doi.org/10.1109/Group4.2013.6644420
Publication status	Published - 2013
Event	10th International Conference on Group IV Photonics (GFP 2013) - Seoul, Korea, Republic of Duration: 28 Aug 2013 → 30 Aug 2013 http://www.gfp-ieee.org/

Conference

Conference	10th International Conference on Group IV Photonics (GFP 2013)
Country/Territory	Korea, Republic of
City	Seoul
Period	28/08/2013 → 30/08/2013
Internet address	http://www.gfp-ieee.org/

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10.1109/Group4.2013.6644420

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title = "High Efficiency Wavelength Conversion of 40 Gbps Signals at 1550 nm in SOI Nano-Rib Waveguides Using p-i-n Diodes",

abstract = "We demonstrate enhancement of FWM wavelength conversion of a 40 Gbps signal in a reverse-biased p-i-n junction silicon waveguide. A conversion efficiency of −4.6 dB enables a conversion power penalty as low as 0.2 dB.",

author = "Andrzej Gajda and {Da Ros}, Francesco and Dragana Vukovic and L. Zimmermann and Christophe Peucheret and B. Tillack and K. Peterman",

year = "2013",

doi = "10.1109/Group4.2013.6644420",

language = "English",

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booktitle = "2013 IEEE 10th International Conference on Group IV Photonics (GFP)",

publisher = "IEEE",

address = "United States",

note = "10th International Conference on Group IV Photonics (GFP 2013) ; Conference date: 28-08-2013 Through 30-08-2013",

url = "http://www.gfp-ieee.org/",

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Gajda, A, Da Ros, F, Vukovic, D, Zimmermann, L, Peucheret, C, Tillack, B & Peterman, K 2013, High Efficiency Wavelength Conversion of 40 Gbps Signals at 1550 nm in SOI Nano-Rib Waveguides Using p-i-n Diodes. in 2013 IEEE 10th International Conference on Group IV Photonics (GFP). IEEE, pp. 160-161, 10th International Conference on Group IV Photonics (GFP 2013), Seoul, Korea, Republic of, 28/08/2013. https://doi.org/10.1109/Group4.2013.6644420

High Efficiency Wavelength Conversion of 40 Gbps Signals at 1550 nm in SOI Nano-Rib Waveguides Using p-i-n Diodes. / Gajda, Andrzej; Da Ros, Francesco; Vukovic, Dragana; Zimmermann, L.; Peucheret, Christophe; Tillack, B.; Peterman, K.

2013 IEEE 10th International Conference on Group IV Photonics (GFP). IEEE, 2013. p. 160-161.

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

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AU - Da Ros, Francesco

AU - Vukovic, Dragana

AU - Zimmermann, L.

AU - Peucheret, Christophe

AU - Tillack, B.

AU - Peterman, K.

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AB - We demonstrate enhancement of FWM wavelength conversion of a 40 Gbps signal in a reverse-biased p-i-n junction silicon waveguide. A conversion efficiency of −4.6 dB enables a conversion power penalty as low as 0.2 dB.

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DO - 10.1109/Group4.2013.6644420

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BT - 2013 IEEE 10th International Conference on Group IV Photonics (GFP)

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ER -

High Efficiency Wavelength Conversion of 40 Gbps Signals at 1550 nm in SOI Nano-Rib Waveguides Using p-i-n Diodes

Abstract

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