High Efficiency Wavelength Conversion of 40 Gbps Signals at 1550 nm in SOI Nano-Rib Waveguides Using p-i-n Diodes

Andrzej Gajda, Francesco Da Ros, Dragana Vukovic, L. Zimmermann, Christophe Peucheret, B. Tillack, K. Peterman

    Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review

    Abstract

    We demonstrate enhancement of FWM wavelength conversion of a 40 Gbps signal in a reverse-biased p-i-n junction silicon waveguide. A conversion efficiency of −4.6 dB enables a conversion power penalty as low as 0.2 dB.
    Original languageEnglish
    Title of host publication2013 IEEE 10th International Conference on Group IV Photonics (GFP)
    PublisherIEEE
    Publication date2013
    Pages160-161
    ISBN (Print)978-1-4673-5803-3
    DOIs
    Publication statusPublished - 2013
    Event2013 10th IEEE International Conference on Group IV Photonics - Seoul, Korea, Republic of
    Duration: 28 Aug 201330 Aug 2013
    Conference number: 10
    https://ieeexplore.ieee.org/xpl/conhome/6621626/proceeding

    Conference

    Conference2013 10th IEEE International Conference on Group IV Photonics
    Number10
    Country/TerritoryKorea, Republic of
    CitySeoul
    Period28/08/201330/08/2013
    Internet address

    Fingerprint

    Dive into the research topics of 'High Efficiency Wavelength Conversion of 40 Gbps Signals at 1550 nm in SOI Nano-Rib Waveguides Using p-i-n Diodes'. Together they form a unique fingerprint.

    Cite this