High efficiency 600-mW pHEMT distributed power amplifier employing drain impedance tapering technique

Kumar Narendra, Lokesh Anand, Sangaran Pragash, Vitaliy Zhurbenko

    Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review

    Abstract

    4-stage distributed power amplifier (DPA) employing tapering the drain load networks to achieve high efficiency is reported. The active device with enhancement mode pHEMT (pseudomorphic High Electron Mobility Transistor) technology is used. Measurement results of 600 mW, 30 % of power-aided-efficiency (PAE) and gain of 10 dB is achieved within frequency range of 10–1800 MHz. Low supply voltage of 4.5 V is used for each device. Good agreement between measured and simulated results is obtained.
    Original languageEnglish
    Title of host publicationProceedings of International Conference on Microwave and Millimeter Wave Technology, 2008. ICMMT 2008
    Number of pages4
    Volume4
    Place of PublicationNanjing, China.
    PublisherIEEE
    Publication date2008
    Pages1769-1772
    ISBN (Print)978-1-4244-1879-4
    Publication statusPublished - 2008
    EventInternational Conference on Microwave and Millimeter Wave Technology 2008 - Nanjing, China
    Duration: 21 Apr 200824 Apr 2008

    Conference

    ConferenceInternational Conference on Microwave and Millimeter Wave Technology 2008
    Country/TerritoryChina
    CityNanjing
    Period21/04/200824/04/2008

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