High efficiency 600-mW pHEMT distributed power amplifier employing drain impedance tapering technique

Kumar Narendra, Lokesh Anand, Sangaran Pragash, Vitaliy Zhurbenko

Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review

Abstract

4-stage distributed power amplifier (DPA) employing tapering the drain load networks to achieve high efficiency is reported. The active device with enhancement mode pHEMT (pseudomorphic High Electron Mobility Transistor) technology is used. Measurement results of 600 mW, 30 % of power-aided-efficiency (PAE) and gain of 10 dB is achieved within frequency range of 10–1800 MHz. Low supply voltage of 4.5 V is used for each device. Good agreement between measured and simulated results is obtained.
Original languageEnglish
Title of host publicationProceedings of International Conference on Microwave and Millimeter Wave Technology, 2008. ICMMT 2008
Number of pages4
Volume4
Place of PublicationNanjing, China.
PublisherIEEE
Publication date2008
Pages1769-1772
ISBN (Print)978-1-4244-1879-4
Publication statusPublished - 2008
EventInternational Conference on Microwave and Millimeter Wave Technology -
Duration: 1 Jan 2008 → …

Conference

ConferenceInternational Conference on Microwave and Millimeter Wave Technology
Period01/01/2008 → …

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