Abstract
4-stage distributed power amplifier (DPA) employing tapering the drain load networks to achieve high efficiency is reported. The active device with enhancement mode pHEMT (pseudomorphic High Electron Mobility Transistor) technology is used. Measurement results of 600 mW, 30 % of power-aided-efficiency (PAE) and gain of 10 dB is achieved within frequency range of 10–1800 MHz. Low supply voltage of 4.5 V is used for each device. Good agreement between measured and simulated results is obtained.
Original language | English |
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Title of host publication | Proceedings of International Conference on Microwave and Millimeter Wave Technology, 2008. ICMMT 2008 |
Number of pages | 4 |
Volume | 4 |
Place of Publication | Nanjing, China. |
Publisher | IEEE |
Publication date | 2008 |
Pages | 1769-1772 |
ISBN (Print) | 978-1-4244-1879-4 |
Publication status | Published - 2008 |
Event | International Conference on Microwave and Millimeter Wave Technology 2008 - Nanjing, China Duration: 21 Apr 2008 → 24 Apr 2008 |
Conference
Conference | International Conference on Microwave and Millimeter Wave Technology 2008 |
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Country/Territory | China |
City | Nanjing |
Period | 21/04/2008 → 24/04/2008 |