High-Confinement, High-Q Microring Resonators on Silicon Carbide-On-Insulator (SiCOI)

Yi Zheng; Ailun Yi; Minhao Pu; Bingdong Chang; Tiangui You; Kai Huang; Xin Ou; Haiyan Ou

doi:10.1109/ACP.2018.8595751

High-Confinement, High-Q Microring Resonators on Silicon Carbide-On-Insulator (SiCOI)

Yi Zheng
, Ailun Yi
, Minhao Pu
, Bingdong Chang
, Tiangui You
, Kai Huang
, Xin Ou
, Haiyan Ou

Centre of Excellence for Silicon Photonics for Optical Communications

Chinese Academy of Sciences

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

824 Downloads (Orbit)

Abstract

We realize silicon carbide-on-insulator platform based on crystalline 4H SiC and demonstrate high confinement SiC resonators with sub-micron waveguide cross-sectional dimension. The obtained Q (57,000) is the highest Q reported for SiC microring resonators.

Original language	English
Title of host publication	Proceedings of Asia Communications and Photonics Conference
Number of pages	3
Publisher	IEEE
Publication date	2018
ISBN (Print)	9781538661581
DOIs	https://doi.org/10.1109/ACP.2018.8595751
Publication status	Published - 2018
Event	2018 Asia Communications and Photonics Conference - New Century Grand Hotel, Hangzhou, China Duration: 26 Oct 2018 → 29 Oct 2018

Conference

Conference	2018 Asia Communications and Photonics Conference
Location	New Century Grand Hotel
Country/Territory	China
City	Hangzhou
Period	26/10/2018 → 29/10/2018

Keywords

Optical devices
Resonators
Nonlinear optics
Integrated optics

Access to Document

10.1109/ACP.2018.8595751

ACP2018 paper 679Accepted author manuscript, 697 KB

OpenUrl availability

Check availability in DTU Findit

Cite this

@inproceedings{8e76fcadc824482b8e1a3e99ca99c742,

title = "High-Confinement, High-Q Microring Resonators on Silicon Carbide-On-Insulator (SiCOI)",

abstract = "We realize silicon carbide-on-insulator platform based on crystalline 4H SiC and demonstrate high confinement SiC resonators with sub-micron waveguide cross-sectional dimension. The obtained Q (57,000) is the highest Q reported for SiC microring resonators. ",

keywords = "Optical devices, Resonators, Nonlinear optics, Integrated optics",

author = "Yi Zheng and Ailun Yi and Minhao Pu and Bingdong Chang and Tiangui You and Kai Huang and Xin Ou and Haiyan Ou",

year = "2018",

doi = "10.1109/ACP.2018.8595751",

language = "English",

isbn = "9781538661581 ",

booktitle = "Proceedings of Asia Communications and Photonics Conference",

publisher = "IEEE",

address = "United States",

note = "2018 Asia Communications and Photonics Conference<br/>, ACP2018 ; Conference date: 26-10-2018 Through 29-10-2018",

}

TY - GEN

T1 - High-Confinement, High-Q Microring Resonators on Silicon Carbide-On-Insulator (SiCOI)

AU - Zheng, Yi

AU - Yi, Ailun

AU - Pu, Minhao

AU - Chang, Bingdong

AU - You, Tiangui

AU - Huang, Kai

AU - Ou, Xin

AU - Ou, Haiyan

PY - 2018

Y1 - 2018

N2 - We realize silicon carbide-on-insulator platform based on crystalline 4H SiC and demonstrate high confinement SiC resonators with sub-micron waveguide cross-sectional dimension. The obtained Q (57,000) is the highest Q reported for SiC microring resonators.

AB - We realize silicon carbide-on-insulator platform based on crystalline 4H SiC and demonstrate high confinement SiC resonators with sub-micron waveguide cross-sectional dimension. The obtained Q (57,000) is the highest Q reported for SiC microring resonators.

KW - Optical devices

KW - Resonators

KW - Nonlinear optics

KW - Integrated optics

U2 - 10.1109/ACP.2018.8595751

DO - 10.1109/ACP.2018.8595751

M3 - Article in proceedings

SN - 9781538661581

BT - Proceedings of Asia Communications and Photonics Conference

PB - IEEE

T2 - 2018 Asia Communications and Photonics Conference<br/>

Y2 - 26 October 2018 through 29 October 2018

ER -

High-Confinement, High-Q Microring Resonators on Silicon Carbide-On-Insulator (SiCOI)

Abstract

Conference

Keywords

Access to Document

OpenUrl availability

Fingerprint

Cite this