Высокая характеристическая температура лазера на квантовых точках InAs/GaAs/InGaAsP с длиной волны излучения около 1.5 мкм, синтезированного на подложке InP

Translated title of the contribution: High characteristic temperature of near-1 µm InAs/GaAs/InGaAsP quantum dot laser on InP substrate

F.I. Zubov, Elizaveta Semenova, Irina Kulkova, Kresten Yvind, N.V. Kryzhanovskaya, M.V. Maximov, A.E. Zhukov

Research output: Contribution to journalJournal articleResearchpeer-review

Abstract

We report on high temperature stability of a near-1.5 µm laser synthesized on an InP (001) substrate. Self-organized InAs quantum dots capped with a thin GaAs layer were used as an active region of the laser. An InGaAsP quaternary alloy having the bandgap energy of 1.15 eV was utilized as a waveguiding/matrix layer. A high characteristic temperature of the threshold current of T0 = 205 K, evaluated in the temperature range of 20−50◦C, was achieved in ridge waveguide laser diodes. A correlation of T0 values with the bandgap energy of the waveguiding layer was found.
Translated title of the contributionHigh characteristic temperature of near-1 µm InAs/GaAs/InGaAsP quantum dot laser on InP substrate
Original languageRussian
JournalTechnical Physics
Volume51
Issue number10
Pages (from-to)1382-1386
ISSN1063-7842
DOIs
Publication statusPublished - 2017

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