High brightness single photon sources based on photonic wires

J. Claudon; J. Bleuse; M. Bazin; N.S. Malik; P. Jaffrennou; P. Lalanne; Niels Gregersen; J.M. Gerard

High brightness single photon sources based on photonic wires

J. Claudon
, J. Bleuse
, M. Bazin
, N.S. Malik
, P. Jaffrennou
, P. Lalanne
, Niels Gregersen
, J.M. Gerard

CNRS
Université Paris-Sud

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

Abstract

We present a novel single-photon-source based on the emission of a semiconductor quantum dot embedded in a single-mode photonic wire. This geometry ensures a very large coupling (> 95%) of the spontaneous emission to the guided mode. Numerical simulations show that a photon collection efficiency as large as 90% can be obtained for engineered nanowires with a tapered tip and a metallic bottom mirror coated by a thin dielectric layer. Experimentally, a record-high efficiency of 75 ± 10% (for a NA = 0.75 collection optics) has been measured for an InAs quantum dot embedded in such a nanowire, made of GaAs and defined by reactive-ion etching.

Original language	English
Title of host publication	Conference proceedings, ICTON
Publisher	IEEE
Publication date	2009
Pages	We.A4.2
ISBN (Print)	978-1-4244-4826-5
Publication status	Published - 2009
Event	11th International Conference on Transparent Optical Networks - Azores, Portugal Duration: 28 Jun 2009 → 2 Jul 2009 http://www.myeos.org/events/icton2009

Conference

Conference	11th International Conference on Transparent Optical Networks
Country/Territory	Portugal
City	Azores
Period	28/06/2009 → 02/07/2009
Internet address	http://www.myeos.org/events/icton2009

Keywords

waveguide
tapering
quantum dot
nanowire
single photon source

OpenUrl availability

Check availability in DTU Findit

Cite this

@inproceedings{09ae2d1142ae4ae799301e665bba45b8,

title = "High brightness single photon sources based on photonic wires",

abstract = "We present a novel single-photon-source based on the emission of a semiconductor quantum dot embedded in a single-mode photonic wire. This geometry ensures a very large coupling (> 95\%) of the spontaneous emission to the guided mode. Numerical simulations show that a photon collection efficiency as large as 90\% can be obtained for engineered nanowires with a tapered tip and a metallic bottom mirror coated by a thin dielectric layer. Experimentally, a record-high efficiency of 75 ± 10\% (for a NA = 0.75 collection optics) has been measured for an InAs quantum dot embedded in such a nanowire, made of GaAs and defined by reactive-ion etching.",

keywords = "waveguide, tapering, quantum dot, nanowire, single photon source",

author = "J. Claudon and J. Bleuse and M. Bazin and N.S. Malik and P. Jaffrennou and P. Lalanne and Niels Gregersen and J.M. Gerard",

year = "2009",

language = "English",

isbn = "978-1-4244-4826-5",

pages = "We.A4.2",

booktitle = "Conference proceedings, ICTON",

publisher = "IEEE",

address = "United States",

note = "11th International Conference on Transparent Optical Networks, ICTON'09 ; Conference date: 28-06-2009 Through 02-07-2009",

url = "http://www.myeos.org/events/icton2009",

}

TY - GEN

T1 - High brightness single photon sources based on photonic wires

AU - Claudon, J.

AU - Bleuse, J.

AU - Bazin, M.

AU - Malik, N.S.

AU - Jaffrennou, P.

AU - Lalanne, P.

AU - Gregersen, Niels

AU - Gerard, J.M.

PY - 2009

Y1 - 2009

N2 - We present a novel single-photon-source based on the emission of a semiconductor quantum dot embedded in a single-mode photonic wire. This geometry ensures a very large coupling (> 95%) of the spontaneous emission to the guided mode. Numerical simulations show that a photon collection efficiency as large as 90% can be obtained for engineered nanowires with a tapered tip and a metallic bottom mirror coated by a thin dielectric layer. Experimentally, a record-high efficiency of 75 ± 10% (for a NA = 0.75 collection optics) has been measured for an InAs quantum dot embedded in such a nanowire, made of GaAs and defined by reactive-ion etching.

AB - We present a novel single-photon-source based on the emission of a semiconductor quantum dot embedded in a single-mode photonic wire. This geometry ensures a very large coupling (> 95%) of the spontaneous emission to the guided mode. Numerical simulations show that a photon collection efficiency as large as 90% can be obtained for engineered nanowires with a tapered tip and a metallic bottom mirror coated by a thin dielectric layer. Experimentally, a record-high efficiency of 75 ± 10% (for a NA = 0.75 collection optics) has been measured for an InAs quantum dot embedded in such a nanowire, made of GaAs and defined by reactive-ion etching.

KW - waveguide

KW - tapering

KW - quantum dot

KW - nanowire

KW - single photon source

M3 - Article in proceedings

SN - 978-1-4244-4826-5

SP - We.A4.2

BT - Conference proceedings, ICTON

PB - IEEE

T2 - 11th International Conference on Transparent Optical Networks

Y2 - 28 June 2009 through 2 July 2009

ER -

High brightness single photon sources based on photonic wires

Abstract

Conference

Keywords

OpenUrl availability

Fingerprint

Cite this