High brightness semiconductor lasers with reduced filamentation

John McInerney; Peter. O'Brien; Peter M. W. Skovgaard; John Houlihan; Mark Mullane; Eamonn O'Neill

High brightness semiconductor lasers with reduced filamentation

John McInerney, Peter. O'Brien, Peter M. W. Skovgaard, John Houlihan, Mark Mullane, Eamonn O'Neill

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

Abstract

High brightness semiconductor lasers have applications in spectroscopy, fiber lasers, manufacturing and materials processing, medicine and free space communication or energy transfer. The main difficulty associated with high brightness is that, because of COD, high power requires a large aperture. Large apertures result in high order transverse modes, filamentation and spatio-temporal instabilities, all of which degrade spatial coherence and therefore brightness. We shall describe a combined assault on three fronts: (1) minimise aperture size required for a given power by maximising the facet damage threshold, (2) for a given aperture, minimise self-focusing and filamentation by minimising the effective nonlinear coefficient (the alpha parameter), and (3) for a given aperture and nonlinear coefficient, develop optical cavities and propagation structures to suppress filamentation and high order transverse modes.

Original language	English
Title of host publication	1999 IEEE LEOS Annual Meeting Conference Proceedings, vol. 1
Place of Publication	San Francisco
Publisher	IEEE
Publication date	1999
Pages	78-79
Publication status	Published - 1999
Event	12th Annual Meeting of the IEEE Lasers and Electro-Optics Society 1999 - San Francisco, United States Duration: 8 Nov 1999 → 11 Nov 1999 Conference number: 12 http://ieeexplore.ieee.org/xpl/mostRecentIssue.jsp?punumber=6561

Conference

Conference	12th Annual Meeting of the IEEE Lasers and Electro-Optics Society 1999
Number	12
Country/Territory	United States
City	San Francisco
Period	08/11/1999 → 11/11/1999
Internet address	http://ieeexplore.ieee.org/xpl/mostRecentIssue.jsp?punumber=6561

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Cite this

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title = "High brightness semiconductor lasers with reduced filamentation",

abstract = "High brightness semiconductor lasers have applications in spectroscopy, fiber lasers, manufacturing and materials processing, medicine and free space communication or energy transfer. The main difficulty associated with high brightness is that, because of COD, high power requires a large aperture. Large apertures result in high order transverse modes, filamentation and spatio-temporal instabilities, all of which degrade spatial coherence and therefore brightness. We shall describe a combined assault on three fronts: (1) minimise aperture size required for a given power by maximising the facet damage threshold, (2) for a given aperture, minimise self-focusing and filamentation by minimising the effective nonlinear coefficient (the alpha parameter), and (3) for a given aperture and nonlinear coefficient, develop optical cavities and propagation structures to suppress filamentation and high order transverse modes.",

author = "John McInerney and Peter. O'Brien and Skovgaard, {Peter M. W.} and John Houlihan and Mark Mullane and Eamonn O'Neill",

year = "1999",

language = "English",

pages = "78--79",

booktitle = "1999 IEEE LEOS Annual Meeting Conference Proceedings, vol. 1",

publisher = "IEEE",

address = "United States",

note = "12th Annual Meeting of the IEEE Lasers and Electro-Optics Society 1999, LEOS'99 ; Conference date: 08-11-1999 Through 11-11-1999",

url = "http://ieeexplore.ieee.org/xpl/mostRecentIssue.jsp?punumber=6561",

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McInerney, J, O'Brien, P, Skovgaard, PMW, Houlihan, J, Mullane, M & O'Neill, E 1999, High brightness semiconductor lasers with reduced filamentation. in 1999 IEEE LEOS Annual Meeting Conference Proceedings, vol. 1. IEEE, San Francisco, pp. 78-79, 12th Annual Meeting of the IEEE Lasers and Electro-Optics Society 1999, San Francisco, California, United States, 08/11/1999.

TY - GEN

T1 - High brightness semiconductor lasers with reduced filamentation

AU - McInerney, John

AU - O'Brien, Peter.

AU - Skovgaard, Peter M. W.

AU - Houlihan, John

AU - Mullane, Mark

AU - O'Neill, Eamonn

N1 - Conference code: 12

PY - 1999

Y1 - 1999

N2 - High brightness semiconductor lasers have applications in spectroscopy, fiber lasers, manufacturing and materials processing, medicine and free space communication or energy transfer. The main difficulty associated with high brightness is that, because of COD, high power requires a large aperture. Large apertures result in high order transverse modes, filamentation and spatio-temporal instabilities, all of which degrade spatial coherence and therefore brightness. We shall describe a combined assault on three fronts: (1) minimise aperture size required for a given power by maximising the facet damage threshold, (2) for a given aperture, minimise self-focusing and filamentation by minimising the effective nonlinear coefficient (the alpha parameter), and (3) for a given aperture and nonlinear coefficient, develop optical cavities and propagation structures to suppress filamentation and high order transverse modes.

AB - High brightness semiconductor lasers have applications in spectroscopy, fiber lasers, manufacturing and materials processing, medicine and free space communication or energy transfer. The main difficulty associated with high brightness is that, because of COD, high power requires a large aperture. Large apertures result in high order transverse modes, filamentation and spatio-temporal instabilities, all of which degrade spatial coherence and therefore brightness. We shall describe a combined assault on three fronts: (1) minimise aperture size required for a given power by maximising the facet damage threshold, (2) for a given aperture, minimise self-focusing and filamentation by minimising the effective nonlinear coefficient (the alpha parameter), and (3) for a given aperture and nonlinear coefficient, develop optical cavities and propagation structures to suppress filamentation and high order transverse modes.

M3 - Article in proceedings

SP - 78

EP - 79

BT - 1999 IEEE LEOS Annual Meeting Conference Proceedings, vol. 1

PB - IEEE

CY - San Francisco

T2 - 12th Annual Meeting of the IEEE Lasers and Electro-Optics Society 1999

Y2 - 8 November 1999 through 11 November 1999

ER -