High brightness semiconductor lasers with reduced filamentation

John McInerney, Peter. O'Brien, Peter M. W. Skovgaard, John Houlihan, Mark Mullane, Eamonn O'Neill

Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review

Abstract

High brightness semiconductor lasers have applications in spectroscopy, fiber lasers, manufacturing and materials processing, medicine and free space communication or energy transfer. The main difficulty associated with high brightness is that, because of COD, high power requires a large aperture. Large apertures result in high order transverse modes, filamentation and spatio-temporal instabilities, all of which degrade spatial coherence and therefore brightness. We shall describe a combined assault on three fronts: (1) minimise aperture size required for a given power by maximising the facet damage threshold, (2) for a given aperture, minimise self-focusing and filamentation by minimising the effective nonlinear coefficient (the alpha parameter), and (3) for a given aperture and nonlinear coefficient, develop optical cavities and propagation structures to suppress filamentation and high order transverse modes.
Original languageEnglish
Title of host publication1999 IEEE LEOS Annual Meeting Conference Proceedings, vol. 1
Place of PublicationSan Francisco
PublisherIEEE
Publication date1999
Pages78-79
Publication statusPublished - 1999
Event12th Annual Meeting of the IEEE Lasers and Electro-Optics Society 1999 - San Francisco, CA, United States
Duration: 8 Nov 199911 Nov 1999
Conference number: 12
http://ieeexplore.ieee.org/xpl/mostRecentIssue.jsp?punumber=6561

Conference

Conference12th Annual Meeting of the IEEE Lasers and Electro-Optics Society 1999
Number12
CountryUnited States
CitySan Francisco, CA
Period08/11/199911/11/1999
Internet address

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