High aspect ratio MEMS capacitor for high frequency impedance matching applications

Arda Deniz Yalcinkaya, Søren Jensen, Ole Hansen

    Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearch

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    Abstract

    We present a microelectromechanical tunable capacitor with a low control voltage, a wide tuning range and adequate electrical quality factor. The device is fabricated in a single-crystalline silicon layer using deep reactive ion etching (DRIE) for obtaining high-aspect ratio (> 20) parallel comb-drive structures with vertical sidewalls. The process sequence for fabrication of the devices uses only one lithographic masking step and can be completed in a short time. The fabricated device was characterized with respect to electrical quality factor, tuning range, self-resonance frequency and transient response and it was found that the device is a suitable passive component to be used in impedance matching applications, band-pass filtering or voltage controlled oscillators in the Very High Frequency (VHF) and Ultra High Frequency (UHF) bands.
    Original languageEnglish
    Title of host publicationProceedings of the 2003 10th IEEE International Conference on Electronics, Circuits and Systems, 2003. ICECS 2003.
    Volume2
    PublisherIEEE
    Publication date2003
    ISBN (Print)0-7803-8163-7
    DOIs
    Publication statusPublished - 2003
    EventProceedings of the 2003 10th IEEE International Conference on Electronics, Circuits and Systems, 2003. -
    Duration: 1 Jan 2003 → …

    Conference

    ConferenceProceedings of the 2003 10th IEEE International Conference on Electronics, Circuits and Systems, 2003.
    Period01/01/2003 → …

    Bibliographical note

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